Development of a rapid and automated TEM sample preparation method in semiconductor failure analysis and the study of the relevant TEM artifact

Jiyan Dai; S. F. Tee; C. L. Tay; Z. G. Song; S. Ansari; E. Er; S. Redkar

doi:10.1016/S0026-2692(00)00124-5

Development of a rapid and automated TEM sample preparation method in semiconductor failure analysis and the study of the relevant TEM artifact

Jiyan Dai
, S. F. Tee
, C. L. Tay
, Z. G. Song
, S. Ansari
, E. Er
, S. Redkar

Research output: Journal article publication › Journal article › Academic research › peer-review

22 Citations (Scopus)

Abstract

Automated TEM sample preparation using focused ion beam (FIB) followed by plucking has been proposed to be a fast and reliable method in semiconductor failure analysis with extremely short cycle time needs. Artifacts caused by sample supporting film to image quality, energy dispersive X-ray (EDX) and electron energy loss spectrum (EELS) analysis are discussed. Damage (amorphizing) to sample surface induced by Ga+ion beam implantation during Pt protection film deposition was proved by TEM observation, and the method to avoid this damage are proposed.

Original language	English
Pages (from-to)	221-226
Number of pages	6
Journal	Microelectronics Journal
Volume	32
Issue number	3
DOIs	https://doi.org/10.1016/S0026-2692(00)00124-5
Publication status	Published - 1 Jan 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0026-2692(00)00124-5

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abstract = "Automated TEM sample preparation using focused ion beam (FIB) followed by plucking has been proposed to be a fast and reliable method in semiconductor failure analysis with extremely short cycle time needs. Artifacts caused by sample supporting film to image quality, energy dispersive X-ray (EDX) and electron energy loss spectrum (EELS) analysis are discussed. Damage (amorphizing) to sample surface induced by Ga+ion beam implantation during Pt protection film deposition was proved by TEM observation, and the method to avoid this damage are proposed.",

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AU - Dai, Jiyan

AU - Tee, S. F.

AU - Tay, C. L.

AU - Song, Z. G.

AU - Ansari, S.

AU - Er, E.

AU - Redkar, S.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Automated TEM sample preparation using focused ion beam (FIB) followed by plucking has been proposed to be a fast and reliable method in semiconductor failure analysis with extremely short cycle time needs. Artifacts caused by sample supporting film to image quality, energy dispersive X-ray (EDX) and electron energy loss spectrum (EELS) analysis are discussed. Damage (amorphizing) to sample surface induced by Ga+ion beam implantation during Pt protection film deposition was proved by TEM observation, and the method to avoid this damage are proposed.

AB - Automated TEM sample preparation using focused ion beam (FIB) followed by plucking has been proposed to be a fast and reliable method in semiconductor failure analysis with extremely short cycle time needs. Artifacts caused by sample supporting film to image quality, energy dispersive X-ray (EDX) and electron energy loss spectrum (EELS) analysis are discussed. Damage (amorphizing) to sample surface induced by Ga+ion beam implantation during Pt protection film deposition was proved by TEM observation, and the method to avoid this damage are proposed.

UR - https://www.scopus.com/pages/publications/0035281349

U2 - 10.1016/S0026-2692(00)00124-5

DO - 10.1016/S0026-2692(00)00124-5

M3 - Journal article

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JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3

ER -

Development of a rapid and automated TEM sample preparation method in semiconductor failure analysis and the study of the relevant TEM artifact

Abstract

ASJC Scopus subject areas

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