Development of a rapid and automated TEM sample preparation method in semiconductor failure analysis and the study of the relevant TEM artifact

Jiyan Dai, S. F. Tee, C. L. Tay, Z. G. Song, S. Ansari, E. Er, S. Redkar

Research output: Journal article publicationJournal articleAcademic researchpeer-review

19 Citations (Scopus)

Abstract

Automated TEM sample preparation using focused ion beam (FIB) followed by plucking has been proposed to be a fast and reliable method in semiconductor failure analysis with extremely short cycle time needs. Artifacts caused by sample supporting film to image quality, energy dispersive X-ray (EDX) and electron energy loss spectrum (EELS) analysis are discussed. Damage (amorphizing) to sample surface induced by Ga+ion beam implantation during Pt protection film deposition was proved by TEM observation, and the method to avoid this damage are proposed.
Original languageEnglish
Pages (from-to)221-226
Number of pages6
JournalMicroelectronics Journal
Volume32
Issue number3
DOIs
Publication statusPublished - 1 Jan 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this