Abstract
Automated TEM sample preparation using focused ion beam (FIB) followed by plucking has been proposed to be a fast and reliable method in semiconductor failure analysis with extremely short cycle time needs. Artifacts caused by sample supporting film to image quality, energy dispersive X-ray (EDX) and electron energy loss spectrum (EELS) analysis are discussed. Damage (amorphizing) to sample surface induced by Ga+ion beam implantation during Pt protection film deposition was proved by TEM observation, and the method to avoid this damage are proposed.
Original language | English |
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Pages (from-to) | 221-226 |
Number of pages | 6 |
Journal | Microelectronics Journal |
Volume | 32 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 Jan 2001 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering