Determination of the density of trap states in organic thin film transistors

Feng Yan

doi:10.1117/12.733516

Determination of the density of trap states in organic thin film transistors

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

Polymer thin-film transistors based on poly(9,9-dioctylfluorene-co- bithiophene) (F8T2) have been studied in the temperature range from 130 to 300K. In this temperature range both the field effect mobility and the drain current show thermally activated behaviour. The channel current at low gate voltage (|Vgs|< |Vth|) can be fitted with a power function of gate voltage. We deduce the presence of an exponential distribution of localized states above the dominant transport level from the gate bias and temperature dependence of the drain current.

Original language	English
Title of host publication	Organic Field-Effect Transistors VI
Volume	6658
DOIs	https://doi.org/10.1117/12.733516
Publication status	Published - 1 Dec 2007
Event	Organic Field-Effect Transistors VI - San Diego, CA, United States Duration: 26 Aug 2007 → 28 Aug 2007

Conference

Conference	Organic Field-Effect Transistors VI
Country/Territory	United States
City	San Diego, CA
Period	26/08/07 → 28/08/07

Keywords

Density of states
Semiconducting polymer
Thin film transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.733516

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title = "Determination of the density of trap states in organic thin film transistors",

abstract = "Polymer thin-film transistors based on poly(9,9-dioctylfluorene-co- bithiophene) (F8T2) have been studied in the temperature range from 130 to 300K. In this temperature range both the field effect mobility and the drain current show thermally activated behaviour. The channel current at low gate voltage (|Vgs|< |Vth|) can be fitted with a power function of gate voltage. We deduce the presence of an exponential distribution of localized states above the dominant transport level from the gate bias and temperature dependence of the drain current.",

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AB - Polymer thin-film transistors based on poly(9,9-dioctylfluorene-co- bithiophene) (F8T2) have been studied in the temperature range from 130 to 300K. In this temperature range both the field effect mobility and the drain current show thermally activated behaviour. The channel current at low gate voltage (|Vgs|< |Vth|) can be fitted with a power function of gate voltage. We deduce the presence of an exponential distribution of localized states above the dominant transport level from the gate bias and temperature dependence of the drain current.

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KW - Semiconducting polymer

KW - Thin film transistor

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M3 - Conference article published in proceeding or book

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BT - Organic Field-Effect Transistors VI

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Y2 - 26 August 2007 through 28 August 2007

ER -

Determination of the density of trap states in organic thin film transistors

Abstract

Conference

Keywords

ASJC Scopus subject areas

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