Abstract
Polymer thin-film transistors based on poly(9,9-dioctylfluorene-co- bithiophene) (F8T2) have been studied in the temperature range from 130 to 300K. In this temperature range both the field effect mobility and the drain current show thermally activated behaviour. The channel current at low gate voltage (|Vgs|< |Vth|) can be fitted with a power function of gate voltage. We deduce the presence of an exponential distribution of localized states above the dominant transport level from the gate bias and temperature dependence of the drain current.
Original language | English |
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Title of host publication | Organic Field-Effect Transistors VI |
Volume | 6658 |
DOIs | |
Publication status | Published - 1 Dec 2007 |
Event | Organic Field-Effect Transistors VI - San Diego, CA, United States Duration: 26 Aug 2007 → 28 Aug 2007 |
Conference
Conference | Organic Field-Effect Transistors VI |
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Country/Territory | United States |
City | San Diego, CA |
Period | 26/08/07 → 28/08/07 |
Keywords
- Density of states
- Semiconducting polymer
- Thin film transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering