Determination of the density of trap states in organic thin film transistors

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Polymer thin-film transistors based on poly(9,9-dioctylfluorene-co- bithiophene) (F8T2) have been studied in the temperature range from 130 to 300K. In this temperature range both the field effect mobility and the drain current show thermally activated behaviour. The channel current at low gate voltage (|Vgs|< |Vth|) can be fitted with a power function of gate voltage. We deduce the presence of an exponential distribution of localized states above the dominant transport level from the gate bias and temperature dependence of the drain current.
Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors VI
Volume6658
DOIs
Publication statusPublished - 1 Dec 2007
EventOrganic Field-Effect Transistors VI - San Diego, CA, United States
Duration: 26 Aug 200728 Aug 2007

Conference

ConferenceOrganic Field-Effect Transistors VI
CountryUnited States
CitySan Diego, CA
Period26/08/0728/08/07

Keywords

  • Density of states
  • Semiconducting polymer
  • Thin film transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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