Determination of optimal insulator thickness for MISiC hydrogen sensors

J. P. Xu; P. T. Lai; B. Han; Wing Man Tang

doi:10.1016/j.sse.2004.04.002

Determination of optimal insulator thickness for MISiC hydrogen sensors

J. P. Xu, P. T. Lai, B. Han, Wing Man Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

8 Citations (Scopus)

Abstract

Response mechanisms of hydrogen sensor based on a metal-insulator-SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the hydrogen sensor by combining thermionic emission with quantum-mechanical tunneling of charge carriers, and considering hydrogen-induced barrier-height modulation. Simulated results are in good agreement with experimental data. Relation between device performance and insulator thickness is investigated using the proposed model, and the optimal range of insulator thickness can be determined by taking into account the tradeoff between device sensitivity, reliability and resolution for high-temperature applications.

Original language	English
Pages (from-to)	1673-1677
Number of pages	5
Journal	Solid-State Electronics
Volume	48
Issue number	9
DOIs	https://doi.org/10.1016/j.sse.2004.04.002
Publication status	Published - 1 Sept 2004
Externally published	Yes

Keywords

Hydrogen sensor
Metal-insulator-SiC (MISiC)
Schottky-barrier diode (SBD)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

More information

10.1016/j.sse.2004.04.002

Cite this

@article{94ef35193f634be2b0494373f095d3bf,

title = "Determination of optimal insulator thickness for MISiC hydrogen sensors",

abstract = "Response mechanisms of hydrogen sensor based on a metal-insulator-SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the hydrogen sensor by combining thermionic emission with quantum-mechanical tunneling of charge carriers, and considering hydrogen-induced barrier-height modulation. Simulated results are in good agreement with experimental data. Relation between device performance and insulator thickness is investigated using the proposed model, and the optimal range of insulator thickness can be determined by taking into account the tradeoff between device sensitivity, reliability and resolution for high-temperature applications.",

keywords = "Hydrogen sensor, Metal-insulator-SiC (MISiC), Schottky-barrier diode (SBD)",

author = "Xu, {J. P.} and Lai, {P. T.} and B. Han and Tang, {Wing Man}",

year = "2004",

month = sep,

day = "1",

doi = "10.1016/j.sse.2004.04.002",

language = "English",

volume = "48",

pages = "1673--1677",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "9",

}

TY - JOUR

T1 - Determination of optimal insulator thickness for MISiC hydrogen sensors

AU - Xu, J. P.

AU - Lai, P. T.

AU - Han, B.

AU - Tang, Wing Man

PY - 2004/9/1

Y1 - 2004/9/1

N2 - Response mechanisms of hydrogen sensor based on a metal-insulator-SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the hydrogen sensor by combining thermionic emission with quantum-mechanical tunneling of charge carriers, and considering hydrogen-induced barrier-height modulation. Simulated results are in good agreement with experimental data. Relation between device performance and insulator thickness is investigated using the proposed model, and the optimal range of insulator thickness can be determined by taking into account the tradeoff between device sensitivity, reliability and resolution for high-temperature applications.

AB - Response mechanisms of hydrogen sensor based on a metal-insulator-SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the hydrogen sensor by combining thermionic emission with quantum-mechanical tunneling of charge carriers, and considering hydrogen-induced barrier-height modulation. Simulated results are in good agreement with experimental data. Relation between device performance and insulator thickness is investigated using the proposed model, and the optimal range of insulator thickness can be determined by taking into account the tradeoff between device sensitivity, reliability and resolution for high-temperature applications.

KW - Hydrogen sensor

KW - Metal-insulator-SiC (MISiC)

KW - Schottky-barrier diode (SBD)

UR - http://www.scopus.com/inward/record.url?scp=2942659585&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2004.04.002

DO - 10.1016/j.sse.2004.04.002

M3 - Journal article

SN - 0038-1101

VL - 48

SP - 1673

EP - 1677

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

Determination of optimal insulator thickness for MISiC hydrogen sensors

Abstract

Keywords

ASJC Scopus subject areas

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