Determination of optimal insulator thickness for MISiC hydrogen sensors

J. P. Xu, P. T. Lai, B. Han, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

8 Citations (Scopus)


Response mechanisms of hydrogen sensor based on a metal-insulator-SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the hydrogen sensor by combining thermionic emission with quantum-mechanical tunneling of charge carriers, and considering hydrogen-induced barrier-height modulation. Simulated results are in good agreement with experimental data. Relation between device performance and insulator thickness is investigated using the proposed model, and the optimal range of insulator thickness can be determined by taking into account the tradeoff between device sensitivity, reliability and resolution for high-temperature applications.
Original languageEnglish
Pages (from-to)1673-1677
Number of pages5
JournalSolid-State Electronics
Issue number9
Publication statusPublished - 1 Sept 2004
Externally publishedYes


  • Hydrogen sensor
  • Metal-insulator-SiC (MISiC)
  • Schottky-barrier diode (SBD)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'Determination of optimal insulator thickness for MISiC hydrogen sensors'. Together they form a unique fingerprint.

Cite this