Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy

Zhibin Yang; Wen Huang; Jianhua Hao

doi:10.1063/1.4816356

Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy

Zhibin Yang
, Wen Huang
, Jianhua Hao

Research output: Journal article publication › Journal article › Academic research › peer-review

13 Citations (Scopus)

Abstract

Techniques of X-ray and ultraviolet photoelectron spectroscopy are performed to investigate the energy band discontinuity of pulsed-laser-deposited SrTiO3(STO)/GaAs heterostructure. The valence band offset is determined to be 2.6 eV, while the conduction band offset is deduced to be 0.7 eV. As a consequence, an energy band diagram of STO/GaAs with a type II band alignment forming at the interface is precisely constructed. The chemical states across the STO/GaAs interface are investigated by sputter-depth profile, and there are no detectable interfacial reaction and intermediate layer occurring between the epitaxial STO film and GaAs substrate.

Original language	English
Article number	031919
Journal	Applied Physics Letters
Volume	103
Issue number	3
DOIs	https://doi.org/10.1063/1.4816356
Publication status	Published - 15 Jul 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4816356

http://hdl.handle.net/10397/19464

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@article{aa0530be4f8347b6b8669101070049c6,

title = "Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy",

abstract = "Techniques of X-ray and ultraviolet photoelectron spectroscopy are performed to investigate the energy band discontinuity of pulsed-laser-deposited SrTiO3(STO)/GaAs heterostructure. The valence band offset is determined to be 2.6 eV, while the conduction band offset is deduced to be 0.7 eV. As a consequence, an energy band diagram of STO/GaAs with a type II band alignment forming at the interface is precisely constructed. The chemical states across the STO/GaAs interface are investigated by sputter-depth profile, and there are no detectable interfacial reaction and intermediate layer occurring between the epitaxial STO film and GaAs substrate.",

author = "Zhibin Yang and Wen Huang and Jianhua Hao",

year = "2013",

month = jul,

day = "15",

doi = "10.1063/1.4816356",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy. / Yang, Zhibin; Huang, Wen; Hao, Jianhua.
In: Applied Physics Letters, Vol. 103, No. 3, 031919, 15.07.2013.

Research output: Journal article publication › Journal article › Academic research › peer-review

TY - JOUR

T1 - Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy

AU - Yang, Zhibin

AU - Huang, Wen

AU - Hao, Jianhua

PY - 2013/7/15

Y1 - 2013/7/15

N2 - Techniques of X-ray and ultraviolet photoelectron spectroscopy are performed to investigate the energy band discontinuity of pulsed-laser-deposited SrTiO3(STO)/GaAs heterostructure. The valence band offset is determined to be 2.6 eV, while the conduction band offset is deduced to be 0.7 eV. As a consequence, an energy band diagram of STO/GaAs with a type II band alignment forming at the interface is precisely constructed. The chemical states across the STO/GaAs interface are investigated by sputter-depth profile, and there are no detectable interfacial reaction and intermediate layer occurring between the epitaxial STO film and GaAs substrate.

AB - Techniques of X-ray and ultraviolet photoelectron spectroscopy are performed to investigate the energy band discontinuity of pulsed-laser-deposited SrTiO3(STO)/GaAs heterostructure. The valence band offset is determined to be 2.6 eV, while the conduction band offset is deduced to be 0.7 eV. As a consequence, an energy band diagram of STO/GaAs with a type II band alignment forming at the interface is precisely constructed. The chemical states across the STO/GaAs interface are investigated by sputter-depth profile, and there are no detectable interfacial reaction and intermediate layer occurring between the epitaxial STO film and GaAs substrate.

UR - https://www.scopus.com/pages/publications/84881540143

U2 - 10.1063/1.4816356

DO - 10.1063/1.4816356

M3 - Journal article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 031919

ER -

Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy

Abstract

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