TY - JOUR
T1 - Design Optimization of Silicon and Lithium Niobate Hybrid Integrated Traveling-Wave Mach-Zehnder Modulator
AU - Cai, Junming
AU - Guo, Changjian
AU - Lu, Chao
AU - Lau, Alan Pak Tao
AU - Chen, Pengxin
AU - Liu, Liu
N1 - Funding Information:
Manuscript received April 8, 2021; revised June 13, 2021; accepted June 16, 2021. Date of publication June 21, 2021; date of current version July 8, 2021. This work was supported in part by the National Key Research and Development Program under Grant 2019YFB1803902, in part by Guangdong Basic and Applied Basic Research Foundation under Grant 2021A1515012215, in part by the Science and Technology Planning Project of Guangdong Province under Grant 2019A050510039, and in part by the Natural Science Foundation of Guangdong Province under Grant 2018A0303130117. (Corresponding authors: Pengxin Chen; Liu Liu.) Junming Cai, Changjian Guo, and Pengxin Chen are with the Centre for Optical and Electromagnetic Research, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Higher-Education Mega-Center, Guangzhou 510006, China (e-mail: [email protected]; [email protected]).
Publisher Copyright:
© 2009-2012 IEEE.
PY - 2021/8
Y1 - 2021/8
N2 - Lithium niobate, dueto its strong electro-optic effect, is an excellent material for high-performance optical modulators. Hybrid integration of thin film lithium niobate and silicon photonic circuits makes it possible to fully exploit potentials of the two material systems. In this paper, we introduce a detailed design procedure for silicon and lithium niobate hybrid integrated modulator using coplanar line electrodes based on Mach-Zehnder interferometer push-pull configuration. A multiphysics model for the crossing section of the modulation section is proposed and analyzed. The results show that optimizing solely the V_{\pi } L product would not lead to the best 3-dB bandwidth for a certain half-wave voltage due to the increased microwave losses. There exists an optimal ground-signal electrode gap value, which is about 8-9{\,\mu m} for the present modulator structure. For these optimized structures, 3-dB bandwidths can reach 45 GHz and 137 GHz with half-wave voltages of 2 V and 4 V, respectively, for a lithium niobate waveguide total thickness of 600 nm and a ridge height of 200 nm.
AB - Lithium niobate, dueto its strong electro-optic effect, is an excellent material for high-performance optical modulators. Hybrid integration of thin film lithium niobate and silicon photonic circuits makes it possible to fully exploit potentials of the two material systems. In this paper, we introduce a detailed design procedure for silicon and lithium niobate hybrid integrated modulator using coplanar line electrodes based on Mach-Zehnder interferometer push-pull configuration. A multiphysics model for the crossing section of the modulation section is proposed and analyzed. The results show that optimizing solely the V_{\pi } L product would not lead to the best 3-dB bandwidth for a certain half-wave voltage due to the increased microwave losses. There exists an optimal ground-signal electrode gap value, which is about 8-9{\,\mu m} for the present modulator structure. For these optimized structures, 3-dB bandwidths can reach 45 GHz and 137 GHz with half-wave voltages of 2 V and 4 V, respectively, for a lithium niobate waveguide total thickness of 600 nm and a ridge height of 200 nm.
KW - hybride Mach-Zehnder modulator
KW - Lithium niobate
UR - http://www.scopus.com/inward/record.url?scp=85112190452&partnerID=8YFLogxK
U2 - 10.1109/JPHOT.2021.3090768
DO - 10.1109/JPHOT.2021.3090768
M3 - Journal article
AN - SCOPUS:85112190452
SN - 1943-0655
VL - 13
SP - 1
EP - 6
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
IS - 4
M1 - 9461596
ER -