Design of Dual-Band 28/39GHz Power Amplifier MMIC in 0.15-μm GaN HEMT Technology

Han Wen; Xinyu Zhou; Wenjie Feng; Wenquan Che; Quan Xue

Design of Dual-Band 28/39GHz Power Amplifier MMIC in 0.15-μm GaN HEMT Technology

Han Wen, Xinyu Zhou, Wenjie Feng, Wenquan Che, Quan Xue

The Hong Kong Polytechnic University

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

A dual-band high efficiency power amplifier (PA) at Ka-band (28/39 GHz) by using 0.15 um GaN on SiC process is proposed. The PA utilizes two-stage two-way combined structure with dual-band matching networks which are composed of a series transmission line and impedance buffer element, to fulfil matching conditions at both fundamental and harmonic termination. The proposed dual-band PA achieves the small signal gain of 26/15 dB, 35 dBm saturation output power, 38%/29 % peak power added efficiency (PAE) at 28 and 39 GHz, respectively. The proposed GaN MMIC PA achieves in a small size (1.6 mm * 1.2 mm) while still remaining the comparable performance in other parameters.

Original language	English
Title of host publication	2022 IEEE Conference on Antenna Measurements and Applications (CAMA)
Publication status	Published - 5 Jan 2023

More information

https://ieeexplore.ieee.org/document/10002617

Cite this

@inproceedings{b86f2a89036a4cd093c497f6a7bf8b27,

title = "Design of Dual-Band 28/39GHz Power Amplifier MMIC in 0.15-μm GaN HEMT Technology",

abstract = "A dual-band high efficiency power amplifier (PA) at Ka-band (28/39 GHz) by using 0.15 um GaN on SiC process is proposed. The PA utilizes two-stage two-way combined structure with dual-band matching networks which are composed of a series transmission line and impedance buffer element, to fulfil matching conditions at both fundamental and harmonic termination. The proposed dual-band PA achieves the small signal gain of 26/15 dB, 35 dBm saturation output power, 38%/29 % peak power added efficiency (PAE) at 28 and 39 GHz, respectively. The proposed GaN MMIC PA achieves in a small size (1.6 mm * 1.2 mm) while still remaining the comparable performance in other parameters.",

author = "Han Wen and Xinyu Zhou and Wenjie Feng and Wenquan Che and Quan Xue",

year = "2023",

month = jan,

day = "5",

language = "English",

booktitle = "2022 IEEE Conference on Antenna Measurements and Applications (CAMA)",

}

TY - GEN

T1 - Design of Dual-Band 28/39GHz Power Amplifier MMIC in 0.15-μm GaN HEMT Technology

AU - Wen, Han

AU - Zhou, Xinyu

AU - Feng, Wenjie

AU - Che, Wenquan

AU - Xue, Quan

PY - 2023/1/5

Y1 - 2023/1/5

N2 - A dual-band high efficiency power amplifier (PA) at Ka-band (28/39 GHz) by using 0.15 um GaN on SiC process is proposed. The PA utilizes two-stage two-way combined structure with dual-band matching networks which are composed of a series transmission line and impedance buffer element, to fulfil matching conditions at both fundamental and harmonic termination. The proposed dual-band PA achieves the small signal gain of 26/15 dB, 35 dBm saturation output power, 38%/29 % peak power added efficiency (PAE) at 28 and 39 GHz, respectively. The proposed GaN MMIC PA achieves in a small size (1.6 mm * 1.2 mm) while still remaining the comparable performance in other parameters.

AB - A dual-band high efficiency power amplifier (PA) at Ka-band (28/39 GHz) by using 0.15 um GaN on SiC process is proposed. The PA utilizes two-stage two-way combined structure with dual-band matching networks which are composed of a series transmission line and impedance buffer element, to fulfil matching conditions at both fundamental and harmonic termination. The proposed dual-band PA achieves the small signal gain of 26/15 dB, 35 dBm saturation output power, 38%/29 % peak power added efficiency (PAE) at 28 and 39 GHz, respectively. The proposed GaN MMIC PA achieves in a small size (1.6 mm * 1.2 mm) while still remaining the comparable performance in other parameters.

M3 - Conference article published in proceeding or book

BT - 2022 IEEE Conference on Antenna Measurements and Applications (CAMA)

ER -

Design of Dual-Band 28/39GHz Power Amplifier MMIC in 0.15-μm GaN HEMT Technology

Abstract

More information

Fingerprint

Cite this