Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector

Di Wu, Yuange Wang, Longhui Zeng, Cheng Jia, Enping Wu, Tingting Xu, Zhifeng Shi, Yongtao Tian, Xinjian Li, Yuen Hong Tsang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

81 Citations (Scopus)

Abstract

The rich variety and attractive properties of two-dimensional (2D) layered nanomaterials provide an ideal platform for fabricating next generation of advanced optoelectronic devices. Recently, a newly discovered 2D layered PtSe2 thin film has exhibited outstanding broadband sensitivity and optoelectronic properties. In our work, a large-area 2D layered PtSe2 thin film was used to construct the PtSe2/CdTe heterojunction infrared photodetector (PD). This PD exhibited a broad detection range coverage from 200 to 2000 nm with a high responsivity of 506.5 mA/W, a high specific detectivity of 4.2 × 1011 Jones, a high current on/off ratio of 7 × 106, and a fast response speed of 8.1/43.6 μs at room temperature. Additionally, the PtSe2/CdTe heterojunction PD exhibits excellent repeatability and stability in air. The high-performance of the PtSe2/CdTe heterojunction PD demonstrated in this work reveals that it has great potential to be used for broadband infrared detection.

Original languageEnglish
Pages (from-to)3820-3827
Number of pages8
JournalACS Photonics
Volume5
Issue number9
DOIs
Publication statusPublished - 19 Sep 2018

Keywords

  • 2D layered materials
  • CdTe
  • heterojunction
  • infrared photodetector
  • PtSe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this