Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector

Di Wu; Yuange Wang; Longhui Zeng; Cheng Jia; Enping Wu; Tingting Xu; Zhifeng Shi; Yongtao Tian; Xinjian Li; Yuen Hong Tsang

doi:10.1021/acsphotonics.8b00853

Design of 2D Layered PtSe₂ Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector

Di Wu, Yuange Wang, Longhui Zeng, Cheng Jia, Enping Wu, Tingting Xu, Zhifeng Shi, Yongtao Tian, Xinjian Li, Yuen Hong Tsang

Research output: Journal article publication › Journal article › Academic research › peer-review

129 Citations (Scopus)

Abstract

The rich variety and attractive properties of two-dimensional (2D) layered nanomaterials provide an ideal platform for fabricating next generation of advanced optoelectronic devices. Recently, a newly discovered 2D layered PtSe₂ thin film has exhibited outstanding broadband sensitivity and optoelectronic properties. In our work, a large-area 2D layered PtSe₂ thin film was used to construct the PtSe₂/CdTe heterojunction infrared photodetector (PD). This PD exhibited a broad detection range coverage from 200 to 2000 nm with a high responsivity of 506.5 mA/W, a high specific detectivity of 4.2 × 10¹¹ Jones, a high current on/off ratio of 7 × 10⁶, and a fast response speed of 8.1/43.6 μs at room temperature. Additionally, the PtSe₂/CdTe heterojunction PD exhibits excellent repeatability and stability in air. The high-performance of the PtSe₂/CdTe heterojunction PD demonstrated in this work reveals that it has great potential to be used for broadband infrared detection.

Original language	English
Pages (from-to)	3820-3827
Number of pages	8
Journal	ACS Photonics
Volume	5
Issue number	9
DOIs	https://doi.org/10.1021/acsphotonics.8b00853
Publication status	Published - 19 Sept 2018

Keywords

2D layered materials
CdTe
heterojunction
infrared photodetector
PtSe

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

More information

10.1021/acsphotonics.8b00853

Cite this

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title = "Design of 2D Layered PtSe2 Heterojunction for the High-Performance, Room-Temperature, Broadband, Infrared Photodetector",

abstract = "The rich variety and attractive properties of two-dimensional (2D) layered nanomaterials provide an ideal platform for fabricating next generation of advanced optoelectronic devices. Recently, a newly discovered 2D layered PtSe2 thin film has exhibited outstanding broadband sensitivity and optoelectronic properties. In our work, a large-area 2D layered PtSe2 thin film was used to construct the PtSe2/CdTe heterojunction infrared photodetector (PD). This PD exhibited a broad detection range coverage from 200 to 2000 nm with a high responsivity of 506.5 mA/W, a high specific detectivity of 4.2 × 1011 Jones, a high current on/off ratio of 7 × 106, and a fast response speed of 8.1/43.6 μs at room temperature. Additionally, the PtSe2/CdTe heterojunction PD exhibits excellent repeatability and stability in air. The high-performance of the PtSe2/CdTe heterojunction PD demonstrated in this work reveals that it has great potential to be used for broadband infrared detection.",

keywords = "2D layered materials, CdTe, heterojunction, infrared photodetector, PtSe",

author = "Di Wu and Yuange Wang and Longhui Zeng and Cheng Jia and Enping Wu and Tingting Xu and Zhifeng Shi and Yongtao Tian and Xinjian Li and Tsang, {Yuen Hong}",

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AU - Wu, Di

AU - Wang, Yuange

AU - Zeng, Longhui

AU - Jia, Cheng

AU - Wu, Enping

AU - Xu, Tingting

AU - Shi, Zhifeng

AU - Tian, Yongtao

AU - Li, Xinjian

AU - Tsang, Yuen Hong

PY - 2018/9/19

Y1 - 2018/9/19

N2 - The rich variety and attractive properties of two-dimensional (2D) layered nanomaterials provide an ideal platform for fabricating next generation of advanced optoelectronic devices. Recently, a newly discovered 2D layered PtSe2 thin film has exhibited outstanding broadband sensitivity and optoelectronic properties. In our work, a large-area 2D layered PtSe2 thin film was used to construct the PtSe2/CdTe heterojunction infrared photodetector (PD). This PD exhibited a broad detection range coverage from 200 to 2000 nm with a high responsivity of 506.5 mA/W, a high specific detectivity of 4.2 × 1011 Jones, a high current on/off ratio of 7 × 106, and a fast response speed of 8.1/43.6 μs at room temperature. Additionally, the PtSe2/CdTe heterojunction PD exhibits excellent repeatability and stability in air. The high-performance of the PtSe2/CdTe heterojunction PD demonstrated in this work reveals that it has great potential to be used for broadband infrared detection.

AB - The rich variety and attractive properties of two-dimensional (2D) layered nanomaterials provide an ideal platform for fabricating next generation of advanced optoelectronic devices. Recently, a newly discovered 2D layered PtSe2 thin film has exhibited outstanding broadband sensitivity and optoelectronic properties. In our work, a large-area 2D layered PtSe2 thin film was used to construct the PtSe2/CdTe heterojunction infrared photodetector (PD). This PD exhibited a broad detection range coverage from 200 to 2000 nm with a high responsivity of 506.5 mA/W, a high specific detectivity of 4.2 × 1011 Jones, a high current on/off ratio of 7 × 106, and a fast response speed of 8.1/43.6 μs at room temperature. Additionally, the PtSe2/CdTe heterojunction PD exhibits excellent repeatability and stability in air. The high-performance of the PtSe2/CdTe heterojunction PD demonstrated in this work reveals that it has great potential to be used for broadband infrared detection.

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