TY - GEN
T1 - Design and fabrication of micro hot-wire flow sensor using 0.35μm CMOS MEMS technology
AU - Miao, Zhuonan
AU - Chao, Christopher Y.H.
AU - Chiu, Yi
AU - Lin, Chia Wei
AU - Lee, Yi Kuen
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/9/23
Y1 - 2014/9/23
N2 - MEMS sensors are promising for Energy Efficient Building (EeB) because of the potential low cost and low power consumption. Various flow sensors based on MEMS technology have been fabricated. In this work, we designed and fabricated a polysilicon micro hot-wire flow sensor using a commercial 0.35μm 2P4M CMOS technology followed by post-CMOS processing. A post-CMOS MEMS process for a 1.5mm×1.5mm sensor chip using Deep Reactive Ion Etch (DRIE) and spray coating was utilized to finish the fabrication. The fabricated flow sensor was characterized at different flow rates. The fabricated sensor with a dimension of 300μm×2μm×3.76μm demonstrated a sensitivity of 23.87 mV/(m/s) and power consumption of 0.79 mW at Uin =5m/s. The experiment results were consistent with the theoretical prediction and the best results showed an average error of only 5%.
AB - MEMS sensors are promising for Energy Efficient Building (EeB) because of the potential low cost and low power consumption. Various flow sensors based on MEMS technology have been fabricated. In this work, we designed and fabricated a polysilicon micro hot-wire flow sensor using a commercial 0.35μm 2P4M CMOS technology followed by post-CMOS processing. A post-CMOS MEMS process for a 1.5mm×1.5mm sensor chip using Deep Reactive Ion Etch (DRIE) and spray coating was utilized to finish the fabrication. The fabricated flow sensor was characterized at different flow rates. The fabricated sensor with a dimension of 300μm×2μm×3.76μm demonstrated a sensitivity of 23.87 mV/(m/s) and power consumption of 0.79 mW at Uin =5m/s. The experiment results were consistent with the theoretical prediction and the best results showed an average error of only 5%.
UR - http://www.scopus.com/inward/record.url?scp=84908626115&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2014.6908810
DO - 10.1109/NEMS.2014.6908810
M3 - Conference article published in proceeding or book
AN - SCOPUS:84908626115
T3 - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
SP - 289
EP - 293
BT - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Y2 - 13 April 2014 through 16 April 2014
ER -