Design and characterization of a micro strain gauge

Tommy C.P. Lo; Philip Ching Ho Chan; Zhenan Tang

Design and characterization of a micro strain gauge

Tommy C.P. Lo, Philip Ching Ho Chan, Zhenan Tang

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

Silicon piezoresistive stress sensors are used to measure stress on a plastic-encapsulated silicon die. These sensors are conventionally fabricated onto the surface of silicon integrated circuit die as part of the normal processing procedure. Since they can also be used over a wide temperature range after calibration, thermally-induced stresses can be measured. A four-point bending (4PB) stress fixture was used in calibration experiments. The result between the four-point resistance measurement and two-point resistance measurement of the strain gauges were compared. The problem in the calibration process was discussed.

Original language	English
Title of host publication	IEEE Region 10 Annual International Conference, Proceedings/TENCON
Publisher	IEEE
Pages	36-39
Number of pages	4
Publication status	Published - 1 Dec 1995
Externally published	Yes
Event	Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 - Hong Kong, Hong Kong Duration: 6 Nov 1995 → 10 Nov 1995

Conference

Conference	Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95
Country/Territory	Hong Kong
City	Hong Kong
Period	6/11/95 → 10/11/95

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

Cite this

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title = "Design and characterization of a micro strain gauge",

abstract = "Silicon piezoresistive stress sensors are used to measure stress on a plastic-encapsulated silicon die. These sensors are conventionally fabricated onto the surface of silicon integrated circuit die as part of the normal processing procedure. Since they can also be used over a wide temperature range after calibration, thermally-induced stresses can be measured. A four-point bending (4PB) stress fixture was used in calibration experiments. The result between the four-point resistance measurement and two-point resistance measurement of the strain gauges were compared. The problem in the calibration process was discussed.",

author = "Lo, {Tommy C.P.} and Chan, {Philip Ching Ho} and Zhenan Tang",

year = "1995",

month = dec,

day = "1",

language = "English",

pages = "36--39",

booktitle = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",

publisher = "IEEE",

address = "United States",

note = "Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95 ; Conference date: 06-11-1995 Through 10-11-1995",

}

TY - GEN

T1 - Design and characterization of a micro strain gauge

AU - Lo, Tommy C.P.

AU - Chan, Philip Ching Ho

AU - Tang, Zhenan

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Silicon piezoresistive stress sensors are used to measure stress on a plastic-encapsulated silicon die. These sensors are conventionally fabricated onto the surface of silicon integrated circuit die as part of the normal processing procedure. Since they can also be used over a wide temperature range after calibration, thermally-induced stresses can be measured. A four-point bending (4PB) stress fixture was used in calibration experiments. The result between the four-point resistance measurement and two-point resistance measurement of the strain gauges were compared. The problem in the calibration process was discussed.

AB - Silicon piezoresistive stress sensors are used to measure stress on a plastic-encapsulated silicon die. These sensors are conventionally fabricated onto the surface of silicon integrated circuit die as part of the normal processing procedure. Since they can also be used over a wide temperature range after calibration, thermally-induced stresses can be measured. A four-point bending (4PB) stress fixture was used in calibration experiments. The result between the four-point resistance measurement and two-point resistance measurement of the strain gauges were compared. The problem in the calibration process was discussed.

UR - http://www.scopus.com/inward/record.url?scp=0029542582&partnerID=8YFLogxK

M3 - Conference article published in proceeding or book

SP - 36

EP - 39

BT - IEEE Region 10 Annual International Conference, Proceedings/TENCON

PB - IEEE

T2 - Proceedings of the 1995 IEEE Region 10 International Conference on Microelectronics and VLSI, TENCON'95

Y2 - 6 November 1995 through 10 November 1995

ER -

Design and characterization of a micro strain gauge

Abstract

Conference

ASJC Scopus subject areas

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