Design and calibration of a 3-D micro-strain gauge for in situ on chip stress measurements

Tommy C P Lo, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

9 Citations (Scopus)

Abstract

Silicon piezoresistive stress sensors can be used for in situ stress measurements during fabrication and encapsulation of the silicon die. These sensors are fabricated in the silicon die using the conventional silicon processing steps. In this paper we describe a stress sensor or a 3-D micro-stain gauge for such applications. We shall describe the design and fabrication of the test chip, experimental results as well as the detailed calibration procedures using a four-point bending (4PB) fixture. The resistance of stress sensors was found to vary linearly to the applied stress. The piezoresistive coefficient was calculated and found to agree with the reported values for silicon. The problems associated with the calibration process was also discussed.
Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherIEEE
Pages252-255
Number of pages4
Publication statusPublished - 1 Jan 1997
Externally publishedYes
EventProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
Duration: 26 Nov 199628 Nov 1996

Conference

ConferenceProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
CountryMalaysia
CityPenang
Period26/11/9628/11/96

ASJC Scopus subject areas

  • Engineering(all)

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