Design and calibration of a 3-D micro-strain gauge for in situ on chip stress measurements

Tommy C P Lo; Philip Ching Ho Chan

Design and calibration of a 3-D micro-strain gauge for in situ on chip stress measurements

Tommy C P Lo, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

9 Citations (Scopus)

Abstract

Silicon piezoresistive stress sensors can be used for in situ stress measurements during fabrication and encapsulation of the silicon die. These sensors are fabricated in the silicon die using the conventional silicon processing steps. In this paper we describe a stress sensor or a 3-D micro-stain gauge for such applications. We shall describe the design and fabrication of the test chip, experimental results as well as the detailed calibration procedures using a four-point bending (4PB) fixture. The resistance of stress sensors was found to vary linearly to the applied stress. The piezoresistive coefficient was calculated and found to agree with the reported values for silicon. The problems associated with the calibration process was also discussed.

Original language	English
Title of host publication	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Publisher	IEEE
Pages	252-255
Number of pages	4
Publication status	Published - 1 Jan 1997
Externally published	Yes
Event	Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia Duration: 26 Nov 1996 → 28 Nov 1996

Conference

Conference	Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
Country/Territory	Malaysia
City	Penang
Period	26/11/96 → 28/11/96

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Design and calibration of a 3-D micro-strain gauge for in situ on chip stress measurements",

abstract = "Silicon piezoresistive stress sensors can be used for in situ stress measurements during fabrication and encapsulation of the silicon die. These sensors are fabricated in the silicon die using the conventional silicon processing steps. In this paper we describe a stress sensor or a 3-D micro-stain gauge for such applications. We shall describe the design and fabrication of the test chip, experimental results as well as the detailed calibration procedures using a four-point bending (4PB) fixture. The resistance of stress sensors was found to vary linearly to the applied stress. The piezoresistive coefficient was calculated and found to agree with the reported values for silicon. The problems associated with the calibration process was also discussed.",

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pages = "252--255",

booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

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note = "Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE ; Conference date: 26-11-1996 Through 28-11-1996",

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Design and calibration of a 3-D micro-strain gauge for in situ on chip stress measurements. / Lo, Tommy C P; Chan, Philip Ching Ho.
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, 1997. p. 252-255.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Chan, Philip Ching Ho

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N2 - Silicon piezoresistive stress sensors can be used for in situ stress measurements during fabrication and encapsulation of the silicon die. These sensors are fabricated in the silicon die using the conventional silicon processing steps. In this paper we describe a stress sensor or a 3-D micro-stain gauge for such applications. We shall describe the design and fabrication of the test chip, experimental results as well as the detailed calibration procedures using a four-point bending (4PB) fixture. The resistance of stress sensors was found to vary linearly to the applied stress. The piezoresistive coefficient was calculated and found to agree with the reported values for silicon. The problems associated with the calibration process was also discussed.

AB - Silicon piezoresistive stress sensors can be used for in situ stress measurements during fabrication and encapsulation of the silicon die. These sensors are fabricated in the silicon die using the conventional silicon processing steps. In this paper we describe a stress sensor or a 3-D micro-stain gauge for such applications. We shall describe the design and fabrication of the test chip, experimental results as well as the detailed calibration procedures using a four-point bending (4PB) fixture. The resistance of stress sensors was found to vary linearly to the applied stress. The piezoresistive coefficient was calculated and found to agree with the reported values for silicon. The problems associated with the calibration process was also discussed.

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M3 - Conference article published in proceeding or book

SP - 252

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BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

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T2 - Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE

Y2 - 26 November 1996 through 28 November 1996

ER -

Design and calibration of a 3-D micro-strain gauge for in situ on chip stress measurements

Abstract

Conference

ASJC Scopus subject areas

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