Abstract
The amorphous silicon-carbon alloy films have been obtained by filtered cathodic vacuum arc (FCVA) technique. The typical carbon composition is about 32% in the film by using a 50% target (the atomic ratio), which is characterized by X-ray photoemission spectroscopy. The films deposited with various bias voltages and annealed in different temperature were characterized by Raman spectrometer, atomic force microscope, and X-ray diffraction. The disorder of Si-C network increased with using the high bias voltages during the deposition. This high disorder in the film with high bias voltages induces the smaller nanometer crystallites after annealed in 1000°C than low bias. The Raman peaks shift to the high frequency with increasing the annealing temperature up to 750°C due to the increasing of nanometer grain size at the same bias. A sharp transition from nanocrystalline to polycrystalline can be observed when the films annealed under 1000°C.
Original language | English |
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Pages (from-to) | 20-24 |
Number of pages | 5 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 85 |
Issue number | 1 |
DOIs | |
Publication status | Published - 6 Aug 2001 |
Externally published | Yes |
Keywords
- Amorphous silicon carbide
- Raman spectrum
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering