Defect states and charge trapping characteristics of HfO2films for high performance nonvolatile memory applications

Y. Zhang; Y. Y. Shao; X. B. Lu; M. Zeng; Z. Zhang; X. S. Gao; X. J. Zhang; J. M. Liu; Jiyan Dai

doi:10.1063/1.4900745

Defect states and charge trapping characteristics of HfO₂films for high performance nonvolatile memory applications

Y. Zhang, Y. Y. Shao, X. B. Lu, M. Zeng, Z. Zhang, X. S. Gao, X. J. Zhang, J. M. Liu, Jiyan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

62 Citations (Scopus)

Abstract

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO2-Si (MHOS) structure. The devices based on 800°C annealed HfO2film exhibit a large memory window of ∼5.1V under ±10V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 104s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO2films. We investigated the defect states in the HfO2films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1eV to 2.9eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO2based MHOS devices.

Original language	English
Article number	172902
Journal	Applied Physics Letters
Volume	105
Issue number	17
DOIs	https://doi.org/10.1063/1.4900745
Publication status	Published - 27 Oct 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4900745

http://hdl.handle.net/10397/35734

Cite this

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title = "Defect states and charge trapping characteristics of HfO2films for high performance nonvolatile memory applications",

abstract = "In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO2-Si (MHOS) structure. The devices based on 800°C annealed HfO2film exhibit a large memory window of ∼5.1V under ±10V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 104s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO2films. We investigated the defect states in the HfO2films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1eV to 2.9eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO2based MHOS devices.",

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T1 - Defect states and charge trapping characteristics of HfO2films for high performance nonvolatile memory applications

AU - Zhang, Y.

AU - Shao, Y. Y.

AU - Lu, X. B.

AU - Zeng, M.

AU - Zhang, Z.

AU - Gao, X. S.

AU - Zhang, X. J.

AU - Liu, J. M.

AU - Dai, Jiyan

PY - 2014/10/27

Y1 - 2014/10/27

N2 - In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO2-Si (MHOS) structure. The devices based on 800°C annealed HfO2film exhibit a large memory window of ∼5.1V under ±10V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 104s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO2films. We investigated the defect states in the HfO2films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1eV to 2.9eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO2based MHOS devices.

AB - In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO2-Si (MHOS) structure. The devices based on 800°C annealed HfO2film exhibit a large memory window of ∼5.1V under ±10V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 104s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO2films. We investigated the defect states in the HfO2films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1eV to 2.9eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO2based MHOS devices.

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Defect states and charge trapping characteristics of HfO₂films for high performance nonvolatile memory applications

Abstract

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