Defect models and electrical storage mechanism in GeSbTe phase change materials

Bolong Huang, J. Robertson

Research output: Journal article publicationJournal articleAcademic researchpeer-review

16 Citations (Scopus)

Abstract

The nature of defects in the crystalline and amorphous GeTe structures are calculated in order to understand the electrical conduction properties of GeSbTe phase change materials, as used for data storage. The principle defect in the rhombohedral GeTe phase, representing crystalline GeSbTe, is the Ge vacancy. This pins the Fermi level to the valence band edge, making degenerate p-type conduction. The defects in the amorphous phase are typically the Te interstitial or bulk Te sites, and these pin the Fermi level in the middle of the band gap, giving the amorphous phase a higher electrical resistivity.
Original languageEnglish
Pages (from-to)2393-2397
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume358
Issue number17
DOIs
Publication statusPublished - 1 Sep 2012
Externally publishedYes

Keywords

  • Chalcogenide
  • Electronic structure
  • Phase change material

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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