Defect emissions in ZnO nanostructures

A. B. Djurišić, Y. H. Leung, K. H. Tam, Y. F. Hsu, L. Ding, W. K. Ge, Y. C. Zhong, K. S. Wong, W. K. Chan, H. L. Tam, K. W. Cheah, Wai Ming Kwok, D. L. Phillips

Research output: Journal article publicationJournal articleAcademic researchpeer-review

673 Citations (Scopus)


Defects in three different types of ZnO nanostructures before and after annealing under different conditions were studied. The annealing atmosphere and temperature were found to strongly affect the yellow and orange-red defect emissions, while green emission was not significantly affected by annealing. The defect emissions exhibited a strong dependence on the temperature and excitation wavelength, with some defect emissions observable only at low temperatures and for certain excitation wavelengths. The yellow emission in samples prepared by a hydrothermal method is likely due to the presence of OH groups, instead of the commonly assumed interstitial oxygen defect. The green and orange-red emissions are likely due to donor acceptor transitions involving defect complexes, which likely include zinc vacancy complexes in the case of orange-red emissions.
Original languageEnglish
Article number095702
Issue number9
Publication statusPublished - 7 Mar 2007
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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