Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β -Ga2O3thin films

Zhenping Wu, Gongxun Bai, Yingyu Qu, Daoyou Guo, Linghong Li, Peigang Li, Jianhua Hao, Weihua Tang

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� 2016 Author(s). Highly oriented (2-01) Er3+-doped β-Ga2O3(Er:Ga2O3) thin films with different doping concentrations were grown on (0001) sapphire substrates using radio frequency magnetron sputtering. The crystal structure, optical absorption, near-infrared luminescence, and ultraviolet photoresponse properties of Er:Ga2O3films were systematically studied. The evolution of lattice and energy band gap with increasing doping level confirms the chemical substitution of Er3+ions into the Ga2O3crystal lattice. The down-shifting near-infrared luminescence (∼1538 nm: ascribed to Er3+:4I13/2-4I15/2) was observed under ultraviolet excitation. Moreover, an obvious deep ultraviolet photoresponse was also obtained in the formed thin films.
Original languageEnglish
Article number211903
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 23 May 2016

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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