Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β -Ga2O3thin films

Zhenping Wu; Gongxun Bai; Yingyu Qu; Daoyou Guo; Linghong Li; Peigang Li; Jianhua Hao; Weihua Tang

doi:10.1063/1.4952618

Deep ultraviolet photoconductive and near-infrared luminescence properties of Er³⁺-doped β -Ga₂O₃thin films

Zhenping Wu, Gongxun Bai, Yingyu Qu, Daoyou Guo, Linghong Li, Peigang Li, Jianhua Hao, Weihua Tang

Research output: Journal article publication › Journal article › Academic research › peer-review

56 Citations (Scopus)

Abstract

ï¿½ 2016 Author(s). Highly oriented (2-01) Er3+-doped β-Ga2O3(Er:Ga2O3) thin films with different doping concentrations were grown on (0001) sapphire substrates using radio frequency magnetron sputtering. The crystal structure, optical absorption, near-infrared luminescence, and ultraviolet photoresponse properties of Er:Ga2O3films were systematically studied. The evolution of lattice and energy band gap with increasing doping level confirms the chemical substitution of Er3+ions into the Ga2O3crystal lattice. The down-shifting near-infrared luminescence (∼1538 nm: ascribed to Er3+:4I13/2-4I15/2) was observed under ultraviolet excitation. Moreover, an obvious deep ultraviolet photoresponse was also obtained in the formed thin films.

Original language	English
Article number	211903
Journal	Applied Physics Letters
Volume	108
Issue number	21
DOIs	https://doi.org/10.1063/1.4952618
Publication status	Published - 23 May 2016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4952618

http://hdl.handle.net/10397/61578

Cite this

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abstract = "{\"i}¿½ 2016 Author(s). Highly oriented (2-01) Er3+-doped β-Ga2O3(Er:Ga2O3) thin films with different doping concentrations were grown on (0001) sapphire substrates using radio frequency magnetron sputtering. The crystal structure, optical absorption, near-infrared luminescence, and ultraviolet photoresponse properties of Er:Ga2O3films were systematically studied. The evolution of lattice and energy band gap with increasing doping level confirms the chemical substitution of Er3+ions into the Ga2O3crystal lattice. The down-shifting near-infrared luminescence (∼1538 nm: ascribed to Er3+:4I13/2-4I15/2) was observed under ultraviolet excitation. Moreover, an obvious deep ultraviolet photoresponse was also obtained in the formed thin films.",

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T1 - Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β -Ga2O3thin films

AU - Wu, Zhenping

AU - Bai, Gongxun

AU - Qu, Yingyu

AU - Guo, Daoyou

AU - Li, Linghong

AU - Li, Peigang

AU - Hao, Jianhua

AU - Tang, Weihua

PY - 2016/5/23

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Deep ultraviolet photoconductive and near-infrared luminescence properties of Er³⁺-doped β -Ga₂O₃thin films

Abstract

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