Deep ultraviolet photoconductive and near-infrared luminescence properties of Er3+-doped β -Ga2O3thin films

Zhenping Wu, Gongxun Bai, Yingyu Qu, Daoyou Guo, Linghong Li, Peigang Li, Jianhua Hao, Weihua Tang

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Abstract

� 2016 Author(s). Highly oriented (2-01) Er3+-doped β-Ga2O3(Er:Ga2O3) thin films with different doping concentrations were grown on (0001) sapphire substrates using radio frequency magnetron sputtering. The crystal structure, optical absorption, near-infrared luminescence, and ultraviolet photoresponse properties of Er:Ga2O3films were systematically studied. The evolution of lattice and energy band gap with increasing doping level confirms the chemical substitution of Er3+ions into the Ga2O3crystal lattice. The down-shifting near-infrared luminescence (∼1538 nm: ascribed to Er3+:4I13/2-4I15/2) was observed under ultraviolet excitation. Moreover, an obvious deep ultraviolet photoresponse was also obtained in the formed thin films.
Original languageEnglish
Article number211903
JournalApplied Physics Letters
Volume108
Issue number21
DOIs
Publication statusPublished - 23 May 2016

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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