Deep-level photoluminescence studies of undoped and tin-doped (LEC) InP

C. S. Ma, P. W. Chan, V. C. Lo, Chung Wo Ong, S. P. Wong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

1 Citation (Scopus)


The effects of tin doping on the deep-level photoluminescence (PL) spectra of (LEC) InP were studied. Specifically, the effect of rapid thermal annealing (RTA) on the deep emission bands labelled as band A (1.13 eV), band B (1.06 eV), band C (1.20 eV) and band D (0.97 eV) were investigated. Band A appeared in both undoped and doped samples, but it disappeared after RTA for all the samples. It is suggested that band A is due to the formation of a complex involving VInwith residual impurities. The disappearance of band A after RTA is concomitant with the appearance of bands B, C and D. The existence of band B is attributed to the complex formation of VPwith residual impurities. Band C was observed after the annealing process both in undoped and lightly-tin-doped samples and is believed to be due to the formation of VPsingle point defects. Band D was only observed in heavily doped samples and it is believed to be the effect of InPantisite defects.
Original languageEnglish
Pages (from-to)215-220
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Issue number4
Publication statusPublished - 1 Aug 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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