DC characterization of laser-debonded GaN HEMTs

Keyphrases

• Debonding Process 100%
• DC Characterization 100%
• GaN HEMT 100%
• Debonding 66%
• Laser-assisted 66%
• Laser Debonding 66%
• Transmission Electron Microscopy 33%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• Compressive Stress 33%
• Sapphire Substrate 33%
• Dislocation Density 33%
• I-V Characteristics 33%
• Laser Power 33%
• Laser Processing 33%
• Wide Temperature Range 33%
• Noise Properties 33%
• Silicon Substrate 33%
• Defect Density 33%
• Chemical Vapor Deposition Technique 33%
• Active Area 33%
• Low-frequency Noise 33%
• Material Defects 33%
• Heterojunction 33%
• AlGaN-GaN 33%
• Heterointerface 33%
• Voltage Noise 33%
• Noise Power Spectrum 33%
• Defect Properties 33%
• XRD Measurements 33%
• High Electron Mobility Transistor 33%
• Thermal Dissipation 33%
• Flicker Noise 33%

Material Science

• Debonding 100%
• Transistor 100%
• Electron Mobility 100%
• Laser Processing 16%
• Sapphire 16%
• Defect Density 16%
• Heterojunction 16%
• Material Defect 16%
• Chemical Vapor Deposition 16%
• X-Ray Diffraction 16%
• Current-Voltage Characteristic 16%
• Transmission Electron Microscopy 16%
• Silicon 16%
• Density 16%

Engineering

• Debonding 100%
• Experimental Investigation 16%
• Active Area 16%
• Temperature Range 16%
• Tensiles 16%
• Compressive Stress 16%
• Silicon Substrate 16%
• Laser Power 16%
• Significant Change 16%
• Frequency Noise 16%
• Dislocation Density 16%
• Thermal Dissipation 16%
• Sapphire Substrate 16%
• Noise Power 16%
• Laser Processing 16%
• Vapor Deposition 16%
• Chemical Vapor Deposition 16%
• Defect Density 16%
• Power Spectra 16%
• Flicker Noise 16%
• Heterojunctions 16%
• Current-Voltage Characteristic 16%