Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates

Lina Zhao, Zengxing Lu, Fengyuan Zhang, Guo Tian, Xiao Song, Zhongwen Li, Kangrong Huang, Zhang Zhang, Minghui Qin, Sujuan Wu, Xubing Lu, Min Zeng, Xingsen Gao, Jiyan Dai, Jun Ming Liu

Research output: Journal article publicationJournal articleAcademic researchpeer-review


Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ∼60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices.
Original languageEnglish
Article number9680
JournalScientific Reports
Publication statusPublished - 13 Apr 2015

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