Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates

Lina Zhao; Zengxing Lu; Fengyuan Zhang; Guo Tian; Xiao Song; Zhongwen Li; Kangrong Huang; Zhang Zhang; Minghui Qin; Sujuan Wu; Xubing Lu; Min Zeng; Xingsen Gao; Jiyan Dai; Jun Ming Liu

doi:10.1038/srep09680

Current rectifying and resistive switching in high density BiFeO₃ nanocapacitor arrays on Nb-SrTiO₃ substrates

Lina Zhao, Zengxing Lu, Fengyuan Zhang, Guo Tian, Xiao Song, Zhongwen Li, Kangrong Huang, Zhang Zhang, Minghui Qin, Sujuan Wu, Xubing Lu, Min Zeng, Xingsen Gao, Jiyan Dai, Jun Ming Liu

Research output: Journal article publication › Journal article › Academic research › peer-review

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Abstract

Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO₃ nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO₃/SrRuO₃ (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO₃ (Nb-STO) substrates with a lateral size of ∼60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch²) nonvolatile memories and other oxide nanoelectronic devices.

Original language	English
Article number	9680
Journal	Scientific Reports
Volume	5
DOIs	https://doi.org/10.1038/srep09680
Publication status	Published - 13 Apr 2015

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10.1038/srep09680

http://hdl.handle.net/10397/8285

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@article{42c67e3b0be34aa595f5e698db8f77a4,

title = "Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates",

abstract = "Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ∼60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices.",

author = "Lina Zhao and Zengxing Lu and Fengyuan Zhang and Guo Tian and Xiao Song and Zhongwen Li and Kangrong Huang and Zhang Zhang and Minghui Qin and Sujuan Wu and Xubing Lu and Min Zeng and Xingsen Gao and Jiyan Dai and Liu, {Jun Ming}",

year = "2015",

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day = "13",

doi = "10.1038/srep09680",

language = "English",

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T1 - Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates

AU - Zhao, Lina

AU - Lu, Zengxing

AU - Zhang, Fengyuan

AU - Tian, Guo

AU - Song, Xiao

AU - Li, Zhongwen

AU - Huang, Kangrong

AU - Zhang, Zhang

AU - Qin, Minghui

AU - Wu, Sujuan

AU - Lu, Xubing

AU - Zeng, Min

AU - Gao, Xingsen

AU - Dai, Jiyan

AU - Liu, Jun Ming

PY - 2015/4/13

Y1 - 2015/4/13

N2 - Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ∼60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices.

AB - Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ∼60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch2) nonvolatile memories and other oxide nanoelectronic devices.

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U2 - 10.1038/srep09680

DO - 10.1038/srep09680

M3 - Journal article

SN - 2045-2322

VL - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 9680

ER -

Current rectifying and resistive switching in high density BiFeO₃ nanocapacitor arrays on Nb-SrTiO₃ substrates

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