Crystallization-induced stress in tungsten nitride thin films

Y. G. Shen; Y. W. Mai

doi:10.1023/A:1006775821012

Crystallization-induced stress in tungsten nitride thin films

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

Direct measurement of the stress evolution is reported during reactive magnetron sputtering of WN_x using a wafer curvature-based technique. It was found that the film stress changes significantly from compressive to tensile during crystallization. The nitrogen concentration in the films was determined by X-ray photoelectron spectroscopy.

Original language	English
Pages (from-to)	1941-1943
Number of pages	3
Journal	Journal of Materials Science Letters
Volume	19
Issue number	21
DOIs	https://doi.org/10.1023/A:1006775821012
Publication status	Published - Nov 2000
Externally published	Yes

ASJC Scopus subject areas

General Materials Science

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10.1023/A:1006775821012

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title = "Crystallization-induced stress in tungsten nitride thin films",

abstract = "Direct measurement of the stress evolution is reported during reactive magnetron sputtering of WNx using a wafer curvature-based technique. It was found that the film stress changes significantly from compressive to tensile during crystallization. The nitrogen concentration in the films was determined by X-ray photoelectron spectroscopy.",

author = "Shen, \{Y. G.\} and Mai, \{Y. W.\}",

year = "2000",

month = nov,

doi = "10.1023/A:1006775821012",

language = "English",

volume = "19",

pages = "1941--1943",

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AU - Shen, Y. G.

AU - Mai, Y. W.

PY - 2000/11

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N2 - Direct measurement of the stress evolution is reported during reactive magnetron sputtering of WNx using a wafer curvature-based technique. It was found that the film stress changes significantly from compressive to tensile during crystallization. The nitrogen concentration in the films was determined by X-ray photoelectron spectroscopy.

AB - Direct measurement of the stress evolution is reported during reactive magnetron sputtering of WNx using a wafer curvature-based technique. It was found that the film stress changes significantly from compressive to tensile during crystallization. The nitrogen concentration in the films was determined by X-ray photoelectron spectroscopy.

UR - https://www.scopus.com/pages/publications/0034319770

U2 - 10.1023/A:1006775821012

DO - 10.1023/A:1006775821012

M3 - Journal article

AN - SCOPUS:0034319770

SN - 0261-8028

VL - 19

SP - 1941

EP - 1943

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 21

ER -

Crystallization-induced stress in tungsten nitride thin films

Abstract

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