Crystallization-induced stress in tungsten nitride thin films

Y. G. Shen, Y. W. Mai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

Direct measurement of the stress evolution is reported during reactive magnetron sputtering of WNx using a wafer curvature-based technique. It was found that the film stress changes significantly from compressive to tensile during crystallization. The nitrogen concentration in the films was determined by X-ray photoelectron spectroscopy.

Original languageEnglish
Pages (from-to)1941-1943
Number of pages3
JournalJournal of Materials Science Letters
Volume19
Issue number21
DOIs
Publication statusPublished - Nov 2000
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science

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