Abstract
We have developed a process to grow SrTiO3(STO) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ - 2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.
Original language | English |
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Pages (from-to) | 533-535 |
Number of pages | 3 |
Journal | International Journal of Modern Physics B |
Volume | 19 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 3 Jan 2005 |
Externally published | Yes |
Keywords
- Dielectric thin film
- Orientation
- Silicon
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Statistical and Nonlinear Physics
- Mathematical Physics