Crystal defects and grain interface structure of ion-nitride layers

Dongsheng Sun; Fengzhao Li; Jiyan Dai; Douxing Li

Crystal defects and grain interface structure of ion-nitride layers

Dongsheng Sun, Fengzhao Li, Jiyan Dai, Douxing Li

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

In this paper, the high resolution electron microscope was used to disclose the vacancy dishes and the structure of interfaces between the two phases γ′ and σ in atomic size. Meanwhile, the orientation relationship between the two phases was determined to be (111)//(0001) and [110]/[1120] with the two-phases-interfaces being smooth, straight and coherent. The observation shows that the continuous bombing of high speed ions produces a great amount of vacant site defects. The assembly of vacancies forms vacant dish, and the collapse of vacant dish forms stacking fault tetrahedrons and other crystal defects.

Original language	English
Pages (from-to)	358-362
Number of pages	5
Journal	Acta Metallurgica Sinica Series A, Physical Metallurgy & Materials Science
Volume	6 A
Issue number	6
Publication status	Published - 1 Dec 1993
Externally published	Yes

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Crystal defects and grain interface structure of ion-nitride layers",

abstract = "In this paper, the high resolution electron microscope was used to disclose the vacancy dishes and the structure of interfaces between the two phases γ′ and σ in atomic size. Meanwhile, the orientation relationship between the two phases was determined to be (111)//(0001) and [110]/[1120] with the two-phases-interfaces being smooth, straight and coherent. The observation shows that the continuous bombing of high speed ions produces a great amount of vacant site defects. The assembly of vacancies forms vacant dish, and the collapse of vacant dish forms stacking fault tetrahedrons and other crystal defects.",

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AU - Sun, Dongsheng

AU - Li, Fengzhao

AU - Dai, Jiyan

AU - Li, Douxing

PY - 1993/12/1

Y1 - 1993/12/1

N2 - In this paper, the high resolution electron microscope was used to disclose the vacancy dishes and the structure of interfaces between the two phases γ′ and σ in atomic size. Meanwhile, the orientation relationship between the two phases was determined to be (111)//(0001) and [110]/[1120] with the two-phases-interfaces being smooth, straight and coherent. The observation shows that the continuous bombing of high speed ions produces a great amount of vacant site defects. The assembly of vacancies forms vacant dish, and the collapse of vacant dish forms stacking fault tetrahedrons and other crystal defects.

AB - In this paper, the high resolution electron microscope was used to disclose the vacancy dishes and the structure of interfaces between the two phases γ′ and σ in atomic size. Meanwhile, the orientation relationship between the two phases was determined to be (111)//(0001) and [110]/[1120] with the two-phases-interfaces being smooth, straight and coherent. The observation shows that the continuous bombing of high speed ions produces a great amount of vacant site defects. The assembly of vacancies forms vacant dish, and the collapse of vacant dish forms stacking fault tetrahedrons and other crystal defects.

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M3 - Journal article

SN - 1000-9442

VL - 6 A

SP - 358

EP - 362

JO - Acta Metallurgica Sinica Series A, Physical Metallurgy & Materials Science

JF - Acta Metallurgica Sinica Series A, Physical Metallurgy & Materials Science

IS - 6

ER -

Crystal defects and grain interface structure of ion-nitride layers

Abstract

ASJC Scopus subject areas

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