Crystal defects and grain interface structure of ion-nitride layers

Dongsheng Sun, Fengzhao Li, Jiyan Dai, Douxing Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review


In this paper, the high resolution electron microscope was used to disclose the vacancy dishes and the structure of interfaces between the two phases γ′ and σ in atomic size. Meanwhile, the orientation relationship between the two phases was determined to be (111)//(0001) and [110]/[1120] with the two-phases-interfaces being smooth, straight and coherent. The observation shows that the continuous bombing of high speed ions produces a great amount of vacant site defects. The assembly of vacancies forms vacant dish, and the collapse of vacant dish forms stacking fault tetrahedrons and other crystal defects.
Original languageEnglish
Pages (from-to)358-362
Number of pages5
JournalActa Metallurgica Sinica Series A, Physical Metallurgy & Materials Science
Volume6 A
Issue number6
Publication statusPublished - 1 Dec 1993
Externally publishedYes

ASJC Scopus subject areas

  • General Engineering


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