Abstract
Two different structures of unloaded and loaded electromagnetic bandgaps (EBG) are proposed. The models of the unloaded and loaded unit structures are derived by equivalent circuit approach and full-wave electromagnetic simulation is used for extracting the values of the lumped elements in the circuit. A band-stop filter (BSF) has been designed with flat response at a selected frequency by cascading the unit EBG structures. The EBG filter is fabricated on high resistivity silicon substrate employing a microelectromechanical systems (MEMS) surface micromachining process. The measurement results for the loaded EBG reveals a 20 dB stop-band with a bandwidth of 13.2 GHz. The lower and the higher pass-band insertion losses are less than 2 dB and 4.5 dB, respectively. EBG band-stop filters fabricated by the MEMS process have immense potential to be integrated with CMOS devices owing to compactness and low cost.
| Original language | English |
|---|---|
| Pages (from-to) | 434-440 |
| Number of pages | 7 |
| Journal | IEE Proceedings: Microwaves, Antennas and Propagation |
| Volume | 152 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Dec 2005 |
| Externally published | Yes |
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering