Correlation between carrier mobility of pentacene thin-film transistor and surface passivation of its gate dielectric

Keyphrases

• Annealing 66%
• Annealing Temperature 33%
• Atomic Force Microscopy 33%
• Carrier Mobility 100%
• Carrier Transport 33%
• Dielectric Surface 66%
• Energy Dispersive X-ray Analysis 33%
• Field-effect Mobility 33%
• Gate Dielectric 100%
• High Carrier Mobility 33%
• Nitrogen Incorporated 33%
• Passivated 66%
• Pentacene 33%
• Pentacene Thin Film Transistor 100%
• Scanning Electron Microscopy 33%
• Silica 33%
• Surface Passivation 100%
• Thin Film Surfaces 100%

Material Science

• Annealing 25%
• Atomic Force Microscopy 25%
• Carrier Mobility 100%
• Carrier Transport 25%
• Dielectric Material 100%
• Scanning Electron Microscopy 25%
• Surface (Surface Science) 75%
• Surface Passivation 100%
• Thin-Film Transistor 100%