Conventional sintered Cu2-                             xSe thermoelectric material

Zhiming Geng; Dongliang Shi; Lu Shi; Ying Li; G. Jeffrey Snyder; Kwok ho Lam

doi:10.1016/j.jmat.2019.06.005

Conventional sintered Cu_2- _xSe thermoelectric material

Zhiming Geng, Dongliang Shi, Lu Shi, Ying Li, G. Jeffrey Snyder, Kwok ho Lam

The Hong Kong Polytechnic University

Research output: Journal article publication › Journal article › Academic research › peer-review

19 Citations (Scopus)

Abstract

As the featured material of the superionic thermoelectric (TE) material family, copper-chalcogenide Cu_2-xSe is attracting growing research interest for its excellent TE performance derived from the satisfactory power factor and the ultra-low thermal conductivity induced by the superionic effect. Various efforts have been made and proved to be effective to further enhance the TE performance for Cu_2-xSe. However, this material is still far from the application stage, which is mainly due to concerns regarding control of the properties and the costly complex fabrication technology. Here we report a scalable pathway to achieve high-performance and tunable Cu_2-xSe, utilizing conventional sintering technology and copper (Cu)-vacancy engineering with an effective mass model. The figure of merit zT is a competitive value of 1.0 at 800 K for the optimized binary Cu_2-xSe, based on the precise modeling prediction and Cu-vacancy engineering. The changes in TE properties of Cu_2-xSe under heating-cooling cycle tests are also revealed. Our work offers the referable method along with the decent parent material for further enhancement of TE performance, paving a possible route for the application and industrialization of Cu_2-xSe TE materials.

Original language	English
Pages (from-to)	626-633
Number of pages	8
Journal	Journal of Materiomics
Volume	5
Issue number	4
DOIs	https://doi.org/10.1016/j.jmat.2019.06.005 https://doi.org/10.1016/j.jmat.2019.06.005
Publication status	Published - Dec 2019

Keywords

Copper selenide
Copper-vacancy engineering
Effective mass model
Thermoelectric

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Metals and Alloys

More information

http://hdl.handle.net/10397/81727

Cite this

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title = "Conventional sintered Cu2- xSe thermoelectric material",

abstract = "As the featured material of the superionic thermoelectric (TE) material family, copper-chalcogenide Cu2-xSe is attracting growing research interest for its excellent TE performance derived from the satisfactory power factor and the ultra-low thermal conductivity induced by the superionic effect. Various efforts have been made and proved to be effective to further enhance the TE performance for Cu2-xSe. However, this material is still far from the application stage, which is mainly due to concerns regarding control of the properties and the costly complex fabrication technology. Here we report a scalable pathway to achieve high-performance and tunable Cu2-xSe, utilizing conventional sintering technology and copper (Cu)-vacancy engineering with an effective mass model. The figure of merit zT is a competitive value of 1.0 at 800 K for the optimized binary Cu2-xSe, based on the precise modeling prediction and Cu-vacancy engineering. The changes in TE properties of Cu2-xSe under heating-cooling cycle tests are also revealed. Our work offers the referable method along with the decent parent material for further enhancement of TE performance, paving a possible route for the application and industrialization of Cu2-xSe TE materials.",

keywords = "Copper selenide, Copper-vacancy engineering, Effective mass model, Thermoelectric",

author = "Zhiming Geng and Dongliang Shi and Lu Shi and Ying Li and Snyder, {G. Jeffrey} and Lam, {Kwok ho}",

year = "2019",

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T1 - Conventional sintered Cu2- xSe thermoelectric material

AU - Geng, Zhiming

AU - Shi, Dongliang

AU - Shi, Lu

AU - Li, Ying

AU - Snyder, G. Jeffrey

AU - Lam, Kwok ho

PY - 2019/12

Y1 - 2019/12

N2 - As the featured material of the superionic thermoelectric (TE) material family, copper-chalcogenide Cu2-xSe is attracting growing research interest for its excellent TE performance derived from the satisfactory power factor and the ultra-low thermal conductivity induced by the superionic effect. Various efforts have been made and proved to be effective to further enhance the TE performance for Cu2-xSe. However, this material is still far from the application stage, which is mainly due to concerns regarding control of the properties and the costly complex fabrication technology. Here we report a scalable pathway to achieve high-performance and tunable Cu2-xSe, utilizing conventional sintering technology and copper (Cu)-vacancy engineering with an effective mass model. The figure of merit zT is a competitive value of 1.0 at 800 K for the optimized binary Cu2-xSe, based on the precise modeling prediction and Cu-vacancy engineering. The changes in TE properties of Cu2-xSe under heating-cooling cycle tests are also revealed. Our work offers the referable method along with the decent parent material for further enhancement of TE performance, paving a possible route for the application and industrialization of Cu2-xSe TE materials.

AB - As the featured material of the superionic thermoelectric (TE) material family, copper-chalcogenide Cu2-xSe is attracting growing research interest for its excellent TE performance derived from the satisfactory power factor and the ultra-low thermal conductivity induced by the superionic effect. Various efforts have been made and proved to be effective to further enhance the TE performance for Cu2-xSe. However, this material is still far from the application stage, which is mainly due to concerns regarding control of the properties and the costly complex fabrication technology. Here we report a scalable pathway to achieve high-performance and tunable Cu2-xSe, utilizing conventional sintering technology and copper (Cu)-vacancy engineering with an effective mass model. The figure of merit zT is a competitive value of 1.0 at 800 K for the optimized binary Cu2-xSe, based on the precise modeling prediction and Cu-vacancy engineering. The changes in TE properties of Cu2-xSe under heating-cooling cycle tests are also revealed. Our work offers the referable method along with the decent parent material for further enhancement of TE performance, paving a possible route for the application and industrialization of Cu2-xSe TE materials.

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