Controllable Oxidation of ZrS2 to Prepare High‐κ, Single‐Crystal m‐ZrO2 for 2D Electronics

Keyphrases

• Single Crystal 100%
• 2D Electronics 100%
• Controlled Oxidation 100%
• Monoclinic ZrO2 100%
• ZrS2 100%
• Silica 28%
• Dielectric 28%
• Ultrathin 28%
• Band Gap 14%
• In Situ 14%
• Capacitance 14%
• Dielectric Layer 14%
• Permittivity 14%
• Gate Dielectric 14%
• As-grown 14%
• Field-effect Transistors 14%
• Leakage Current 14%
• High Dielectric Constant 14%
• Crystal Quality 14%
• Equivalent Oxide Thickness 14%
• Thermal Oxidation 14%
• High-crystalline 14%
• Controllable Preparation 14%
• Breakdown Voltage 14%
• Transfer Curves 14%
• Technology Node 14%
• Molybdenite 14%
• Negligible Hysteresis 14%
• Inertness 14%
• MoS2 Field Effect Transistors 14%
• Ultra-clean 14%

Engineering

• Monoclinic 100%
• Field-Effect Transistor 28%
• Dielectrics 28%
• Silicon Dioxide 28%
• Molybdenum Disulfide 28%
• Potential Application 14%
• Gate Dielectric 14%
• Dielectric Layer 14%
• Oxide Thickness 14%
• Crystalline Quality 14%
• Thermal Oxidation 14%
• High Dielectric Constant 14%
• Nodes 14%
• Breakdown Voltage 14%
• Band Gap 14%

Material Science

• Zirconia 100%
• Dielectric Material 57%
• Single Crystal 42%
• Field Effect Transistors 28%
• Permittivity 28%
• Capacitance 14%
• Oxide Compound 14%