Contact resistance and reliability of 40 nm carbon nanotube vias

Anshul A. Vyas; Cary Y. Yang; Phillip Wang; Zhou Changjian; Chai Yang

doi:10.1109/IITC-AMC.2016.7507732

Contact resistance and reliability of 40 nm carbon nanotube vias

Anshul A. Vyas
, Cary Y. Yang
, Phillip Wang
, Zhou Changjian
, Chai Yang

The Hong Kong Polytechnic University

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

Carbon nanotubes (CNTs) are promising materials for on-chip interconnect contacts and vias. We report results on 40 nm top-contact metallized CNT vias consisting of the first experimentally extracted contact resistance for this linewidth and current-carrying capacity two orders of magnitude higher than their Cu and W counterparts, well above the ITRS roadmap specifications. To obtain via resistance comparable to those of Cu and W, contact engineering remains a challenge but can be facilitated with the reported contact resistance extraction scheme.

Original language	English
Title of host publication	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Publisher	IEEE
Pages	203-205
Number of pages	3
ISBN (Electronic)	9781509003860
DOIs	https://doi.org/10.1109/IITC-AMC.2016.7507732
Publication status	Published - 8 Jul 2016
Event	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States Duration: 23 May 2016 → 26 May 2016

Conference

Conference	2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Country/Territory	United States
City	San Jose
Period	23/05/16 → 26/05/16

Keywords

carbon nanotubes
contact resistance
interconnects
metallization

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Metals and Alloys
Surfaces, Coatings and Films

More information

10.1109/IITC-AMC.2016.7507732

Cite this

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title = "Contact resistance and reliability of 40 nm carbon nanotube vias",

abstract = "Carbon nanotubes (CNTs) are promising materials for on-chip interconnect contacts and vias. We report results on 40 nm top-contact metallized CNT vias consisting of the first experimentally extracted contact resistance for this linewidth and current-carrying capacity two orders of magnitude higher than their Cu and W counterparts, well above the ITRS roadmap specifications. To obtain via resistance comparable to those of Cu and W, contact engineering remains a challenge but can be facilitated with the reported contact resistance extraction scheme.",

keywords = "carbon nanotubes, contact resistance, interconnects, metallization",

author = "Vyas, \{Anshul A.\} and Yang, \{Cary Y.\} and Phillip Wang and Zhou Changjian and Chai Yang",

year = "2016",

month = jul,

day = "8",

doi = "10.1109/IITC-AMC.2016.7507732",

language = "English",

pages = "203--205",

booktitle = "2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016",

publisher = "IEEE",

address = "United States",

note = "2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 ; Conference date: 23-05-2016 Through 26-05-2016",

}

Vyas, AA, Yang, CY, Wang, P, Changjian, Z & Yang, C 2016, Contact resistance and reliability of 40 nm carbon nanotube vias. in 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016., 7507732, IEEE, pp. 203-205, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016, San Jose, United States, 23/05/16. https://doi.org/10.1109/IITC-AMC.2016.7507732

Contact resistance and reliability of 40 nm carbon nanotube vias. / Vyas, Anshul A.; Yang, Cary Y.; Wang, Phillip et al.
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016. IEEE, 2016. p. 203-205 7507732.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Contact resistance and reliability of 40 nm carbon nanotube vias

AU - Vyas, Anshul A.

AU - Yang, Cary Y.

AU - Wang, Phillip

AU - Changjian, Zhou

AU - Yang, Chai

PY - 2016/7/8

Y1 - 2016/7/8

N2 - Carbon nanotubes (CNTs) are promising materials for on-chip interconnect contacts and vias. We report results on 40 nm top-contact metallized CNT vias consisting of the first experimentally extracted contact resistance for this linewidth and current-carrying capacity two orders of magnitude higher than their Cu and W counterparts, well above the ITRS roadmap specifications. To obtain via resistance comparable to those of Cu and W, contact engineering remains a challenge but can be facilitated with the reported contact resistance extraction scheme.

AB - Carbon nanotubes (CNTs) are promising materials for on-chip interconnect contacts and vias. We report results on 40 nm top-contact metallized CNT vias consisting of the first experimentally extracted contact resistance for this linewidth and current-carrying capacity two orders of magnitude higher than their Cu and W counterparts, well above the ITRS roadmap specifications. To obtain via resistance comparable to those of Cu and W, contact engineering remains a challenge but can be facilitated with the reported contact resistance extraction scheme.

KW - carbon nanotubes

KW - contact resistance

KW - interconnects

KW - metallization

UR - https://www.scopus.com/pages/publications/84981308674

U2 - 10.1109/IITC-AMC.2016.7507732

DO - 10.1109/IITC-AMC.2016.7507732

M3 - Conference article published in proceeding or book

SP - 203

EP - 205

BT - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

PB - IEEE

T2 - 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016

Y2 - 23 May 2016 through 26 May 2016

ER -

Contact resistance and reliability of 40 nm carbon nanotube vias

Abstract

Conference

Keywords

ASJC Scopus subject areas

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