Abstract
Carbon nanotubes (CNTs) are promising materials for on-chip interconnect contacts and vias. We report results on 40 nm top-contact metallized CNT vias consisting of the first experimentally extracted contact resistance for this linewidth and current-carrying capacity two orders of magnitude higher than their Cu and W counterparts, well above the ITRS roadmap specifications. To obtain via resistance comparable to those of Cu and W, contact engineering remains a challenge but can be facilitated with the reported contact resistance extraction scheme.
Original language | English |
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Title of host publication | 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 |
Publisher | IEEE |
Pages | 203-205 |
Number of pages | 3 |
ISBN (Electronic) | 9781509003860 |
DOIs | |
Publication status | Published - 8 Jul 2016 |
Event | 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States Duration: 23 May 2016 → 26 May 2016 |
Conference
Conference | 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 |
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Country/Territory | United States |
City | San Jose |
Period | 23/05/16 → 26/05/16 |
Keywords
- carbon nanotubes
- contact resistance
- interconnects
- metallization
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Metals and Alloys
- Surfaces, Coatings and Films