Contact resistance and reliability of 40 nm carbon nanotube vias

Anshul A. Vyas, Cary Y. Yang, Phillip Wang, Zhou Changjian, Chai Yang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

1 Citation (Scopus)

Abstract

Carbon nanotubes (CNTs) are promising materials for on-chip interconnect contacts and vias. We report results on 40 nm top-contact metallized CNT vias consisting of the first experimentally extracted contact resistance for this linewidth and current-carrying capacity two orders of magnitude higher than their Cu and W counterparts, well above the ITRS roadmap specifications. To obtain via resistance comparable to those of Cu and W, contact engineering remains a challenge but can be facilitated with the reported contact resistance extraction scheme.
Original languageEnglish
Title of host publication2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
PublisherIEEE
Pages203-205
Number of pages3
ISBN (Electronic)9781509003860
DOIs
Publication statusPublished - 8 Jul 2016
Event2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016 - San Jose, United States
Duration: 23 May 201626 May 2016

Conference

Conference2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2016
Country/TerritoryUnited States
CitySan Jose
Period23/05/1626/05/16

Keywords

  • carbon nanotubes
  • contact resistance
  • interconnects
  • metallization

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films

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