Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism

Keyphrases

• Nanowires 100%
• Graphite 100%
• Growth Mechanism 100%
• Metal Chalcogenides 100%
• MoTe2 75%
• Heterostructure 50%
• Two Dimensional 50%
• External Stimuli 25%
• In Situ 25%
• Atomic Resolution 25%
• Schottky Barrier 25%
• Highly Oriented 25%
• Structural Phase Transition 25%
• Electrical Bias 25%
• Lateral Interactions 25%
• Specific Direction 25%
• Oriented Growth 25%
• Nanoelectronics 25%
• Scanning Transmission Electron Microscope 25%
• High-angle Annular Dark Field (HAADF) 25%
• First-principles Calculations 25%
• Metal Phase 25%
• Confinement Effect 25%
• Heating-induced 25%
• Two-dimensional Transition Metal Dichalcogenides 25%
• MoSe2 25%
• Encapsulation Layer 25%
• Electrical Biasing 25%
• Local Joule Heating 25%
• Low Contact Resistance 25%
• Molybdenum Ditelluride 25%
• Contact Electrodes 25%
• Direct Patterning 25%
• Transition Metal Chalcogenides 25%
• Isotropic Growth 25%
• MoTe2 FETs 25%
• Confined Encapsulation 25%

Material Science

• Nanowires 100%
• Heterojunction 100%
• Metal Chalcogenides 100%
• Contact Resistance 50%
• Field Effect Transistors 50%
• Transition Metal Dichalcogenides 50%
• Schottky Barrier 50%
• Molybdenum 50%
• Transition Metal Chalcogenides 50%

Physics

• Heterojunctions 100%
• Chalcogenides 100%
• Nanowire 100%
• Transition Metal Dichalcogenide 50%
• Transition Metal 50%
• First Principle 50%
• High Resolution 50%
• Electron Microscope 50%