Conductivity switching and memory effect in polymer brushes with carbazole pendant moieties

Yang Liu, Shujun Lv, Liang Li, Songmin Shang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)

Abstract

In this paper, poly(2-(N-carbazolyl)ethyl methacrylate) (PCEM) brushes have been prepared on the indium-tin oxide (ITO) surfaces via surface-initiated atom transfer radical polymerization (ATRP) using a silane coupling agent containing the initiator moiety. Films of PCEM brushes between bottom ITO electrode and Al top electrode are sandwiched to fabricate the ITO-g-PCEM/Al device. The device exhibits two conductivity states and can be switched from the initial low-conductivity (OFF) state to the high-conductivity (ON) state at the switching threshold voltages of -1.5 V with the ON/OFF current ratio up to 10 6. The ON state of the device is nonvolatile and can withstand 10 6 pulse read cycles at -0.8 V under ambient conditions. Upon reversing the bias, the ON state cannot be reset to the initial OFF states. The ITO-g-PCEM/Al device behaves as a write-once read-many-times (WORM) memory. Compared with that of the conventional ITO/PCEM/Al device fabricated by spin-coating, the switching voltage is lower in the ITO-g-PCEM/Al memory device.
Original languageEnglish
Pages (from-to)1059-1064
Number of pages6
JournalSynthetic Metals
Volume162
Issue number13-14
DOIs
Publication statusPublished - 1 Aug 2012

Keywords

  • Atom transfer radical polymerization
  • Carbazole
  • Memory effect
  • Polymer brushes
  • Switching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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