High transparency low resistivity ZnO films were grown on silicon and quartz glass. The high carrier concentration in the films was attributed to zinc interstitials. The photoluminescence (PL) peak position shifted towards lower energy with an increase of the oxygen pressure. High energy ions improved the mobility of growth species on the film surface and led to the deposition of ZnO films.
ASJC Scopus subject areas
- Physics and Astronomy(all)