Comprehensive study of ZnO films prepared by filtered cathodic vacuum arc at room temperature

Y. G. Wang, Shu Ping Lau, H. W. Lee, Siu Fung Yu, B. K. Tay, X. H. Zhang, K. Y. Tse, H. H. Hng

Research output: Journal article publicationJournal articleAcademic researchpeer-review

215 Citations (Scopus)


High transparency low resistivity ZnO films were grown on silicon and quartz glass. The high carrier concentration in the films was attributed to zinc interstitials. The photoluminescence (PL) peak position shifted towards lower energy with an increase of the oxygen pressure. High energy ions improved the mobility of growth species on the film surface and led to the deposition of ZnO films.
Original languageEnglish
Pages (from-to)1597-1604
Number of pages8
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 1 Aug 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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