Abstract
High transparency low resistivity ZnO films were grown on silicon and quartz glass. The high carrier concentration in the films was attributed to zinc interstitials. The photoluminescence (PL) peak position shifted towards lower energy with an increase of the oxygen pressure. High energy ions improved the mobility of growth species on the film surface and led to the deposition of ZnO films.
Original language | English |
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Pages (from-to) | 1597-1604 |
Number of pages | 8 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1 Aug 2003 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy