Comparison of interfacial and electrical characteristics of HfO2and HfAlO high-k dielectrics on compressively strained Si1-xGex

K. K.S. Curreem; P. F. Lee; K. S. Wong; J. Y. Dai; M. J. Zhou; J. Wang; Quan Li

doi:10.1063/1.2201887

Comparison of interfacial and electrical characteristics of HfO₂and HfAlO high-k dielectrics on compressively strained Si_1-xGe_x

K. K.S. Curreem, P. F. Lee, K. S. Wong, J. Y. Dai, M. J. Zhou, J. Wang, Quan Li

The Hong Kong Polytechnic University

Research output: Journal article publication › Journal article › Academic research › peer-review

41 Citations (Scopus)

Abstract

Interfacial reactions and electrical properties of Hf O2 and HfAlO high- k gate dielectric films on strained Si1-x Gex (x=17%) fabricated by pulsed-laser deposition were investigated. The dielectric films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. We found that alloying of Hf O2 with alumina can reduce the Ge Ox formation at the interfacial layer and thus reduce the Ge diffusion during the film post-thermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

Original language	English
Article number	182905
Journal	Applied Physics Letters
Volume	88
Issue number	18
DOIs	https://doi.org/10.1063/1.2201887
Publication status	Published - 1 May 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2201887

http://hdl.handle.net/10397/4203

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title = "Comparison of interfacial and electrical characteristics of HfO2and HfAlO high-k dielectrics on compressively strained Si1-xGex",

abstract = "Interfacial reactions and electrical properties of Hf O2 and HfAlO high- k gate dielectric films on strained Si1-x Gex (x=17%) fabricated by pulsed-laser deposition were investigated. The dielectric films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. We found that alloying of Hf O2 with alumina can reduce the Ge Ox formation at the interfacial layer and thus reduce the Ge diffusion during the film post-thermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.",

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AU - Curreem, K. K.S.

AU - Lee, P. F.

AU - Wong, K. S.

AU - Dai, J. Y.

AU - Zhou, M. J.

AU - Wang, J.

AU - Li, Quan

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N2 - Interfacial reactions and electrical properties of Hf O2 and HfAlO high- k gate dielectric films on strained Si1-x Gex (x=17%) fabricated by pulsed-laser deposition were investigated. The dielectric films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. We found that alloying of Hf O2 with alumina can reduce the Ge Ox formation at the interfacial layer and thus reduce the Ge diffusion during the film post-thermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

AB - Interfacial reactions and electrical properties of Hf O2 and HfAlO high- k gate dielectric films on strained Si1-x Gex (x=17%) fabricated by pulsed-laser deposition were investigated. The dielectric films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. We found that alloying of Hf O2 with alumina can reduce the Ge Ox formation at the interfacial layer and thus reduce the Ge diffusion during the film post-thermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

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JF - Applied Physics Letters

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Comparison of interfacial and electrical characteristics of HfO₂and HfAlO high-k dielectrics on compressively strained Si_1-xGe_x

Abstract

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