Comparison of CuPc-based organic thin-film transistors made by different dielectric structures

Keyphrases

• CuPc 100%
• Organic Thin-film Transistors 100%
• Dielectric Structure 100%
• Gate Dielectric 50%
• Gate Electrode 50%
• Subthreshold 33%
• Stress-driven 33%
• High-k Dielectric 33%
• Interfacial Traps 33%
• Oxide Charge 33%
• Dielectric 16%
• Zirconium Dioxide 16%
• Aluminum Oxide 16%
• Interface Properties 16%
• Threshold Voltage Shift 16%
• Electrical Properties 16%
• Stress-induced 16%
• Electrical Characteristics 16%
• Defect States 16%
• Electrode-electrolyte Interface 16%
• Oxygen Diffusion 16%
• Electrical Stress 16%
• Barrier Layer 16%
• Electron Injection 16%
• Copper Phthalocyanine 16%
• High-k Material 16%
• Interfacial Oxide 16%
• Organic Insulator 16%
• Interfacial Trap Density 16%
• Negative Gate Bias 16%
• Bias Stress Effect 16%
• Al2O3-ZrO2 16%
• Gate Bias Stress 16%
• High Carrier Mobility 16%
• Gate Bias 16%
• Subthreshold Slope 16%
• Gate Bias Voltage 16%
• State Creation 16%

Engineering

• Thin-Film Transistor 100%
• Dielectrics 100%
• Gate Dielectric 50%
• Gate Electrode 50%
• Gate Bias 50%
• Experimental Result 16%
• Periodic Time 16%
• Subthreshold Slope 16%
• Bias Voltage 16%
• Induced Stress 16%
• Positive Direction 16%
• Carrier Mobility 16%
• Barrier Layer 16%

Material Science

• Thin-Film Transistor 100%
• Dielectric Material 100%
• Zirconia 28%
• Aluminum Oxide 28%
• Oxide Compound 28%
• Carrier Mobility 14%
• Interface Property 14%
• Density 14%