Comparative study of SOI inverter circuits for low-voltage and low-power applications

Wei Jin; Philip Ching Ho Chan

Comparative study of SOI inverter circuits for low-voltage and low-power applications

Wei Jin
, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

A comparative study of inverter circuits for low-voltage and low-power applications was conducted based on MEDICI simulation. The inverters consist of four types of silicon on insulator (SOI) MOSFETs: fully depleted (FD); non-fully depleted (NFD); dynamic threshold (DT); and double gate (DG). These circuits were compared in terms of power dissipation, delay, and power-delay product. The DGMOS was found to be the most ideal choice for low-power application.

Original language	English
Title of host publication	IEEE International SOI Conference
Publisher	IEEE
Pages	112-113
Number of pages	2
Publication status	Published - 1 Dec 1997
Externally published	Yes
Event	Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, United States Duration: 6 Oct 1997 → 9 Oct 1997

Conference

Conference	Proceedings of the 1997 IEEE International SOI Conference
Country/Territory	United States
City	Fish Camp, CA
Period	6/10/97 → 9/10/97

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@inproceedings{0bf8e75fe98a415ba3b93bcca73538ea,

title = "Comparative study of SOI inverter circuits for low-voltage and low-power applications",

abstract = "A comparative study of inverter circuits for low-voltage and low-power applications was conducted based on MEDICI simulation. The inverters consist of four types of silicon on insulator (SOI) MOSFETs: fully depleted (FD); non-fully depleted (NFD); dynamic threshold (DT); and double gate (DG). These circuits were compared in terms of power dissipation, delay, and power-delay product. The DGMOS was found to be the most ideal choice for low-power application.",

author = "Wei Jin and Chan, \{Philip Ching Ho\}",

year = "1997",

month = dec,

day = "1",

language = "English",

pages = "112--113",

booktitle = "IEEE International SOI Conference",

publisher = "IEEE",

address = "United States",

note = "Proceedings of the 1997 IEEE International SOI Conference ; Conference date: 06-10-1997 Through 09-10-1997",

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TY - GEN

T1 - Comparative study of SOI inverter circuits for low-voltage and low-power applications

AU - Jin, Wei

AU - Chan, Philip Ching Ho

PY - 1997/12/1

Y1 - 1997/12/1

N2 - A comparative study of inverter circuits for low-voltage and low-power applications was conducted based on MEDICI simulation. The inverters consist of four types of silicon on insulator (SOI) MOSFETs: fully depleted (FD); non-fully depleted (NFD); dynamic threshold (DT); and double gate (DG). These circuits were compared in terms of power dissipation, delay, and power-delay product. The DGMOS was found to be the most ideal choice for low-power application.

AB - A comparative study of inverter circuits for low-voltage and low-power applications was conducted based on MEDICI simulation. The inverters consist of four types of silicon on insulator (SOI) MOSFETs: fully depleted (FD); non-fully depleted (NFD); dynamic threshold (DT); and double gate (DG). These circuits were compared in terms of power dissipation, delay, and power-delay product. The DGMOS was found to be the most ideal choice for low-power application.

UR - https://www.scopus.com/pages/publications/0031332650

M3 - Conference article published in proceeding or book

SP - 112

EP - 113

BT - IEEE International SOI Conference

PB - IEEE

T2 - Proceedings of the 1997 IEEE International SOI Conference

Y2 - 6 October 1997 through 9 October 1997

ER -

Comparative study of SOI inverter circuits for low-voltage and low-power applications

Abstract

Conference

ASJC Scopus subject areas

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