Comparative study of SOI inverter circuits for low-voltage and low-power applications

Wei Jin, Philip Ching Ho Chan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

A comparative study of inverter circuits for low-voltage and low-power applications was conducted based on MEDICI simulation. The inverters consist of four types of silicon on insulator (SOI) MOSFETs: fully depleted (FD); non-fully depleted (NFD); dynamic threshold (DT); and double gate (DG). These circuits were compared in terms of power dissipation, delay, and power-delay product. The DGMOS was found to be the most ideal choice for low-power application.
Original languageEnglish
Title of host publicationIEEE International SOI Conference
PublisherIEEE
Pages112-113
Number of pages2
Publication statusPublished - 1 Dec 1997
Externally publishedYes
EventProceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, United States
Duration: 6 Oct 19979 Oct 1997

Conference

ConferenceProceedings of the 1997 IEEE International SOI Conference
CountryUnited States
CityFish Camp, CA
Period6/10/979/10/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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