Abstract
A comparative study of inverter circuits for low-voltage and low-power applications was conducted based on MEDICI simulation. The inverters consist of four types of silicon on insulator (SOI) MOSFETs: fully depleted (FD); non-fully depleted (NFD); dynamic threshold (DT); and double gate (DG). These circuits were compared in terms of power dissipation, delay, and power-delay product. The DGMOS was found to be the most ideal choice for low-power application.
| Original language | English |
|---|---|
| Title of host publication | IEEE International SOI Conference |
| Publisher | IEEE |
| Pages | 112-113 |
| Number of pages | 2 |
| Publication status | Published - 1 Dec 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, United States Duration: 6 Oct 1997 → 9 Oct 1997 |
Conference
| Conference | Proceedings of the 1997 IEEE International SOI Conference |
|---|---|
| Country/Territory | United States |
| City | Fish Camp, CA |
| Period | 6/10/97 → 9/10/97 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering