Compact 100GBaud driverless thin-film lithium niobate modulator on a silicon substrate

Gengxin Chen, Kaixuan Chen, Junwei Zhang, G. A.N. Ranfeng, Q. I. Lu, F. A.N. Xuancong, Ziliang Ruan, L. I.N. Zhenrui, L. I.U. Jie, L. U. Chao, Alan Pak Tao Lau, D. A.I. Daoxin, G. U.O. Changjian, And L.I.U. Liu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

15 Citations (Scopus)

Abstract

Electro-optic (EO) modulators with a high modulation bandwidth are indispensable parts of an optical interconnect system. A key requirement for an energy-efficient EO modulator is the low drive voltage, which can be provided using a standard complementary metal oxide semiconductor circuity without an amplifying driver. Thin-film lithium niobate has emerged as a new promising platform, and shown its capable of achieving driverless and high-speed EO modulators. In this paper, we report a compact high-performance modulator based on the thin-film lithium niobate platform on a silicon substrate. The periodic capacitively loaded travelling-wave electrode is employed to achieve a large modulation bandwidth and a low drive voltage, which can support a driverless single-lane 100Gbaud operation. The folded modulation section design also helps to reduce the device length by almost two thirds. The fabricated device represents a large EO bandwidth of 45GHz with a half-wave voltage of 0.7V. The driverless transmission of a 100Gbaud 4-level pulse amplitude modulation signal is demonstrated with a power consumption of 4.49fj/bit and a bit-error rate below the KP4 forward-error correction threshold of 2.4×10−4

Original languageEnglish
Pages (from-to)25308-25317
Number of pages10
JournalOptics Express
Volume30
Issue number14
DOIs
Publication statusPublished - 4 Jul 2022

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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