Coexistence of hexagonal and orthorhombic structures in NiSi films containing Pt

Jiyan Dai; D. Mangelinck; S. K. Lahiri

doi:10.1063/1.124968

Coexistence of hexagonal and orthorhombic structures in NiSi films containing Pt

Jiyan Dai, D. Mangelinck, S. K. Lahiri

Research output: Journal article publication › Journal article › Academic research › peer-review

11 Citations (Scopus)

Abstract

The structure of Ni(Pt)Si films was investigated using high-resolution electron microscopy (HREM), electron microdiffraction and image simulation techniques. Such films with 5 at. % Pt were sputter deposited onto (111) Si and annealed for l min at 500°C by rapid thermal annealing. Analysis of the HREM pictures, diffraction patterns, and simulation results has revealed that NiSi films containing Pt can assume both hexagonal and orthorhombic structures that can coexist in the same film. The presence of film stresses and Pt seems to play a role in the formation of hexagonal NiSi.

Original language	English
Pages (from-to)	2214-2216
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	15
DOIs	https://doi.org/10.1063/1.124968
Publication status	Published - 11 Oct 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.124968

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abstract = "The structure of Ni(Pt)Si films was investigated using high-resolution electron microscopy (HREM), electron microdiffraction and image simulation techniques. Such films with 5 at. % Pt were sputter deposited onto (111) Si and annealed for l min at 500°C by rapid thermal annealing. Analysis of the HREM pictures, diffraction patterns, and simulation results has revealed that NiSi films containing Pt can assume both hexagonal and orthorhombic structures that can coexist in the same film. The presence of film stresses and Pt seems to play a role in the formation of hexagonal NiSi.",

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AU - Mangelinck, D.

AU - Lahiri, S. K.

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Y1 - 1999/10/11

N2 - The structure of Ni(Pt)Si films was investigated using high-resolution electron microscopy (HREM), electron microdiffraction and image simulation techniques. Such films with 5 at. % Pt were sputter deposited onto (111) Si and annealed for l min at 500°C by rapid thermal annealing. Analysis of the HREM pictures, diffraction patterns, and simulation results has revealed that NiSi films containing Pt can assume both hexagonal and orthorhombic structures that can coexist in the same film. The presence of film stresses and Pt seems to play a role in the formation of hexagonal NiSi.

AB - The structure of Ni(Pt)Si films was investigated using high-resolution electron microscopy (HREM), electron microdiffraction and image simulation techniques. Such films with 5 at. % Pt were sputter deposited onto (111) Si and annealed for l min at 500°C by rapid thermal annealing. Analysis of the HREM pictures, diffraction patterns, and simulation results has revealed that NiSi films containing Pt can assume both hexagonal and orthorhombic structures that can coexist in the same film. The presence of film stresses and Pt seems to play a role in the formation of hexagonal NiSi.

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DO - 10.1063/1.124968

M3 - Journal article

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JF - Applied Physics Letters

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ER -

Coexistence of hexagonal and orthorhombic structures in NiSi films containing Pt

Abstract

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