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CMOS-compatible ruggedized high-temperature Lamb wave pressure sensor
P. Kropelnicki
, K. M. Muckensturm
, X. J. Mu
, A. B. Randles
,
H. Cai
, W. C. Ang
, J. M. Tsai
, H. Vogt
Research output
:
Journal article publication
›
Journal article
›
Academic research
›
peer-review
31
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Citations (Scopus)
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Keyphrases
High Temperature
100%
CMOS Technology
100%
Lamb Waves
100%
Pressure Sensor
100%
Wave Pressure
100%
Ruggedized
100%
Temperature Sensitivity
50%
Composite Structures
50%
Young's Modulus
50%
Temperature Range
50%
Phase Noise
50%
Resonant Frequency
50%
Pressure Sensitivity
50%
Nitrided Layer
50%
Sensor chip
50%
Nitrides
50%
Device Layer
50%
At Resonance
50%
Coupling Coefficient
50%
Model Coupling
50%
Harsh Environment
50%
SOI Wafer
50%
Comb-like
50%
Oil Exploration
50%
Gas Exploration
50%
Pressure Test
50%
Aeronautic Applications
50%
Interdigital Transducer
50%
Resonant Sensor
50%
Modified Butterworth-Van Dyke Model
50%
Temperature Coefficient of Frequency
50%
High-temperature Pressure Sensor
50%
Automobile Applications
50%
Absolute Sensor
50%
Temperature Dependence
50%
Nitride-based
50%
Lamb Wave Modes
50%
Couple Quality
50%
Engineering
Lamb Wave
100%
Pressure Sensor
100%
Aluminum Nitride
75%
Q Factor
25%
Electrode Structure
25%
Temperature Range
25%
Resonance Frequency
25%
Phase Noise
25%
Sensor Chip
25%
Coupling Coefficient
25%
Temperature Coefficient
25%
Nitride Layer
25%
Test Pressure
25%
Aviation
25%
Young's Modulus
25%
Composite Structure
25%
Natural Gas Exploration
25%
Butterworth
25%
Transducer
25%
Oil Exploration
25%
Material Science
Oil Exploration
33%
Natural Gas Exploration
33%