CMOS compatible MEMS pyroelectric infrared detectors: From AlN to ScAlN

Doris K.T. Ng; Chong Pei Ho; Tantan Zhang; Linfang Xu; Li Yan Siow; Wing Wai Chung; Hong Cai; Lennon Y.T. Lee; Qingxin Zhang; Navab Singh

doi:10.1117/12.2582707

CMOS compatible MEMS pyroelectric infrared detectors: From AlN to ScAlN

Doris K.T. Ng, Chong Pei Ho, Tantan Zhang, Linfang Xu, Li Yan Siow, Wing Wai Chung, Hong Cai, Lennon Y.T. Lee, Qingxin Zhang, Navab Singh

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

10 Citations (Scopus)

Abstract

We present the optical and electrical properties of AlN-based and 12% doped ScAlN-based pyroelectric detectors fabricated on 8-inch wafers respectively. Both AlN and ScAlN materials are deposited at a temperature of ∼200oC, making them potential candidates for CMOS compatible MEMS pyroelectric detectors. FTIR spectroscopy is used to measure the absorption of these pyroelectric detectors over the wavelength range of ∼2-14 μm and the results show absorption improvement up to ∼75% for ScAlN-based pyroelectric detectors compared to that of AlN-based pyroelectric detectors at the wavelength of 4.26 μm where CO gas absorption of IR radiation is anticipated. Higher output current (∼3-fold increase) is also observed from ScAlN-based pyroelectric detectors. Other than pyroelectric coefficient that contributes to improved performance for ScAlN-based pyroelectric detectors, we believe that absorptivity of the device also plays a major role in the performance of pyroelectric IR detectors. The results obtained from the study of the electrical and optical properties of AlN-based and ScAlN-based CMOS compatible MEMS pyroelectric detectors will bring forth potential applications of these detectors onto multi-functional integrable and monolithic platforms.

Original language	English
Title of host publication	MOEMS and Miniaturized Systems XX
Editors	Hans Zappe, Wibool Piyawattanametha, Yong-Hwa Park
Publisher	SPIE
ISBN (Electronic)	9781510642294
DOIs	https://doi.org/10.1117/12.2582707
Publication status	Published - Mar 2021
Externally published	Yes
Event	MOEMS and Miniaturized Systems XX 2021 - Virtual, Online, United States Duration: 6 Mar 2021 → 11 Mar 2021

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11697
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	MOEMS and Miniaturized Systems XX 2021
Country/Territory	United States
City	Virtual, Online
Period	6/03/21 → 11/03/21

Keywords

aluminum nitride
CMOS compatible
infrared
MEMS
pyroelectric detector
scandium aluminum nitride

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

More information

10.1117/12.2582707

Cite this

Ng, D. K. T., Ho, C. P., Zhang, T., Xu, L., Siow, L. Y., Chung, W. W., Cai, H., Lee, L. Y. T., Zhang, Q., & Singh, N. (2021). CMOS compatible MEMS pyroelectric infrared detectors: From AlN to ScAlN. In H. Zappe, W. Piyawattanametha, & Y.-H. Park (Eds.), MOEMS and Miniaturized Systems XX Article 116970N (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11697). SPIE. https://doi.org/10.1117/12.2582707

@inproceedings{b27e9d9d0bcf4274b908a8b55f5de5a2,

title = "CMOS compatible MEMS pyroelectric infrared detectors: From AlN to ScAlN",

abstract = "We present the optical and electrical properties of AlN-based and 12% doped ScAlN-based pyroelectric detectors fabricated on 8-inch wafers respectively. Both AlN and ScAlN materials are deposited at a temperature of ∼200oC, making them potential candidates for CMOS compatible MEMS pyroelectric detectors. FTIR spectroscopy is used to measure the absorption of these pyroelectric detectors over the wavelength range of ∼2-14 μm and the results show absorption improvement up to ∼75% for ScAlN-based pyroelectric detectors compared to that of AlN-based pyroelectric detectors at the wavelength of 4.26 μm where CO gas absorption of IR radiation is anticipated. Higher output current (∼3-fold increase) is also observed from ScAlN-based pyroelectric detectors. Other than pyroelectric coefficient that contributes to improved performance for ScAlN-based pyroelectric detectors, we believe that absorptivity of the device also plays a major role in the performance of pyroelectric IR detectors. The results obtained from the study of the electrical and optical properties of AlN-based and ScAlN-based CMOS compatible MEMS pyroelectric detectors will bring forth potential applications of these detectors onto multi-functional integrable and monolithic platforms.",

keywords = "aluminum nitride, CMOS compatible, infrared, MEMS, pyroelectric detector, scandium aluminum nitride",

author = "Ng, {Doris K.T.} and Ho, {Chong Pei} and Tantan Zhang and Linfang Xu and Siow, {Li Yan} and Chung, {Wing Wai} and Hong Cai and Lee, {Lennon Y.T.} and Qingxin Zhang and Navab Singh",

note = "Publisher Copyright: {\textcopyright} 2021 SPIE.; MOEMS and Miniaturized Systems XX 2021 ; Conference date: 06-03-2021 Through 11-03-2021",

year = "2021",

month = mar,

doi = "10.1117/12.2582707",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Hans Zappe and Wibool Piyawattanametha and Yong-Hwa Park",

booktitle = "MOEMS and Miniaturized Systems XX",

address = "United States",

}

Ng, DKT, Ho, CP, Zhang, T, Xu, L, Siow, LY, Chung, WW, Cai, H, Lee, LYT, Zhang, Q & Singh, N 2021, CMOS compatible MEMS pyroelectric infrared detectors: From AlN to ScAlN. in H Zappe, W Piyawattanametha & Y-H Park (eds), MOEMS and Miniaturized Systems XX., 116970N, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11697, SPIE, MOEMS and Miniaturized Systems XX 2021, Virtual, Online, United States, 6/03/21. https://doi.org/10.1117/12.2582707

CMOS compatible MEMS pyroelectric infrared detectors: From AlN to ScAlN. / Ng, Doris K.T.; Ho, Chong Pei; Zhang, Tantan et al.
MOEMS and Miniaturized Systems XX. ed. / Hans Zappe; Wibool Piyawattanametha; Yong-Hwa Park. SPIE, 2021. 116970N (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11697).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - CMOS compatible MEMS pyroelectric infrared detectors: From AlN to ScAlN

AU - Ng, Doris K.T.

AU - Ho, Chong Pei

AU - Zhang, Tantan

AU - Xu, Linfang

AU - Siow, Li Yan

AU - Chung, Wing Wai

AU - Cai, Hong

AU - Lee, Lennon Y.T.

AU - Zhang, Qingxin

AU - Singh, Navab

PY - 2021/3

Y1 - 2021/3

N2 - We present the optical and electrical properties of AlN-based and 12% doped ScAlN-based pyroelectric detectors fabricated on 8-inch wafers respectively. Both AlN and ScAlN materials are deposited at a temperature of ∼200oC, making them potential candidates for CMOS compatible MEMS pyroelectric detectors. FTIR spectroscopy is used to measure the absorption of these pyroelectric detectors over the wavelength range of ∼2-14 μm and the results show absorption improvement up to ∼75% for ScAlN-based pyroelectric detectors compared to that of AlN-based pyroelectric detectors at the wavelength of 4.26 μm where CO gas absorption of IR radiation is anticipated. Higher output current (∼3-fold increase) is also observed from ScAlN-based pyroelectric detectors. Other than pyroelectric coefficient that contributes to improved performance for ScAlN-based pyroelectric detectors, we believe that absorptivity of the device also plays a major role in the performance of pyroelectric IR detectors. The results obtained from the study of the electrical and optical properties of AlN-based and ScAlN-based CMOS compatible MEMS pyroelectric detectors will bring forth potential applications of these detectors onto multi-functional integrable and monolithic platforms.

AB - We present the optical and electrical properties of AlN-based and 12% doped ScAlN-based pyroelectric detectors fabricated on 8-inch wafers respectively. Both AlN and ScAlN materials are deposited at a temperature of ∼200oC, making them potential candidates for CMOS compatible MEMS pyroelectric detectors. FTIR spectroscopy is used to measure the absorption of these pyroelectric detectors over the wavelength range of ∼2-14 μm and the results show absorption improvement up to ∼75% for ScAlN-based pyroelectric detectors compared to that of AlN-based pyroelectric detectors at the wavelength of 4.26 μm where CO gas absorption of IR radiation is anticipated. Higher output current (∼3-fold increase) is also observed from ScAlN-based pyroelectric detectors. Other than pyroelectric coefficient that contributes to improved performance for ScAlN-based pyroelectric detectors, we believe that absorptivity of the device also plays a major role in the performance of pyroelectric IR detectors. The results obtained from the study of the electrical and optical properties of AlN-based and ScAlN-based CMOS compatible MEMS pyroelectric detectors will bring forth potential applications of these detectors onto multi-functional integrable and monolithic platforms.

KW - aluminum nitride

KW - CMOS compatible

KW - infrared

KW - MEMS

KW - pyroelectric detector

KW - scandium aluminum nitride

UR - http://www.scopus.com/inward/record.url?scp=85107440748&partnerID=8YFLogxK

U2 - 10.1117/12.2582707

DO - 10.1117/12.2582707

M3 - Conference article published in proceeding or book

AN - SCOPUS:85107440748

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - MOEMS and Miniaturized Systems XX

A2 - Zappe, Hans

A2 - Piyawattanametha, Wibool

A2 - Park, Yong-Hwa

PB - SPIE

T2 - MOEMS and Miniaturized Systems XX 2021

Y2 - 6 March 2021 through 11 March 2021

ER -

CMOS compatible MEMS pyroelectric infrared detectors: From AlN to ScAlN

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