Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOxfilms

X. Y. Qiu, S. Y. Zhang, T. Zhang, R. X. Wang, L. T. Li, Y. Zhang, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)


Amorphous Ge-doped HfOxfilms have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOxmatrix and the existence of HfSiOxinterfacial layer. Capacitance–voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104cycles. Current–voltage characteristics reveal that Poole–Frenkel tunneling is responsible for electron transport in the Ge-doped HfOxfilm.
Original languageEnglish
Article number797
JournalApplied Physics A: Materials Science and Processing
Issue number9
Publication statusPublished - 1 Sept 2016

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science


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