Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOxfilms

X. Y. Qiu; S. Y. Zhang; T. Zhang; R. X. Wang; L. T. Li; Y. Zhang; Jiyan Dai

doi:10.1007/s00339-016-0326-y

Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfO_xfilms

X. Y. Qiu, S. Y. Zhang, T. Zhang, R. X. Wang, L. T. Li, Y. Zhang, Jiyan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

3 Citations (Scopus)

Abstract

Amorphous Ge-doped HfOxfilms have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOxmatrix and the existence of HfSiOxinterfacial layer. Capacitance–voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104cycles. Current–voltage characteristics reveal that Poole–Frenkel tunneling is responsible for electron transport in the Ge-doped HfOxfilm.

Original language	English
Article number	797
Journal	Applied Physics A: Materials Science and Processing
Volume	122
Issue number	9
DOIs	https://doi.org/10.1007/s00339-016-0326-y
Publication status	Published - 1 Sep 2016

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

More information

10.1007/s00339-016-0326-y

Cite this

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title = "Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOxfilms",

abstract = "Amorphous Ge-doped HfOxfilms have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOxmatrix and the existence of HfSiOxinterfacial layer. Capacitance–voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104cycles. Current–voltage characteristics reveal that Poole–Frenkel tunneling is responsible for electron transport in the Ge-doped HfOxfilm.",

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AU - Qiu, X. Y.

AU - Zhang, S. Y.

AU - Zhang, T.

AU - Wang, R. X.

AU - Li, L. T.

AU - Zhang, Y.

AU - Dai, Jiyan

PY - 2016/9/1

Y1 - 2016/9/1

N2 - Amorphous Ge-doped HfOxfilms have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOxmatrix and the existence of HfSiOxinterfacial layer. Capacitance–voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104cycles. Current–voltage characteristics reveal that Poole–Frenkel tunneling is responsible for electron transport in the Ge-doped HfOxfilm.

AB - Amorphous Ge-doped HfOxfilms have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOxmatrix and the existence of HfSiOxinterfacial layer. Capacitance–voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104cycles. Current–voltage characteristics reveal that Poole–Frenkel tunneling is responsible for electron transport in the Ge-doped HfOxfilm.

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JO - Applied Physics

JF - Applied Physics

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