Amorphous Ge-doped HfOxfilms have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfOxmatrix and the existence of HfSiOxinterfacial layer. Capacitance–voltage hysteresis of the Ag-/Ge-doped HfOx/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 × 104cycles. Current–voltage characteristics reveal that Poole–Frenkel tunneling is responsible for electron transport in the Ge-doped HfOxfilm.
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 1 Sep 2016|
ASJC Scopus subject areas
- Materials Science(all)