Characterizations of low-frequency noise in laser-debonded hvpe-grown GaN thin films

Keyphrases

• Sapphire 100%
• Low-frequency Noise 100%
• MSM Device 100%
• GaN Thin Film 100%
• Noise Level 66%
• GaN Surface 66%
• GaN Films 66%
• Ohmic 66%
• High Power 33%
• Excimer Laser 33%
• Maximum Temperature 33%
• Localized States 33%
• Two-dimensional Simulation 33%
• Thick Film 33%
• Excess Noise 33%
• Control Device 33%
• GaN Layers 33%
• Schottky 33%
• Thermal Annealing Effect 33%
• Experimental Proofs 33%
• Low Frequency Noise Measurements 33%

Engineering

• Frequency Noise 100%
• Thin Films 100%
• Simulation Result 66%
• Noise Level 66%
• Two Dimensional 33%
• Function of Time 33%
• Excimer Laser 33%
• Localized State 33%
• Annealing Effect 33%

Material Science

• Sapphire 100%
• Thin Films 100%
• Film 66%
• Annealing 33%
• Control Component 33%
• Thick Films 33%