Characterizations of laser-assisted debonded GaN films

Keyphrases

• Temperature Rise 100%
• Laser-assisted 100%
• GaN Films 100%
• Photoluminescence 50%
• Si Substrate 50%
• Localized States 50%
• Si Film 50%
• Annealing Effect 50%
• Sapphire 50%
• Debonding Process 50%
• Material Degradation 50%
• Control Device 50%
• Contradictory Results 50%
• Low-frequency Noise 50%
• Local Temperature 50%
• Layer Transfer 50%
• Hydride Vapor Phase Epitaxy 50%
• GaN-on-sapphire 50%
• GaN-on-Si 50%
• GaN Material 50%
• Metal-semiconductor Contact 50%

Engineering

• Temperature Rise 100%
• Materials Degradation 50%
• Si Substrate 50%
• Frequency Noise 50%
• Localized State 50%
• Debonding 50%
• Annealing Effect 50%

Material Science

• Film 100%
• Sapphire 40%
• Debonding 20%
• Photoluminescence 20%
• Control Component 20%
• Hydride 20%
• Materials Degradation 20%
• Vapor Phase Epitaxy 20%