Characterizations of laser-assisted debonded GaN films

C. P. Chan, B. H. Leung, Tai Man Yue, Hau Chung Man, C. Surya

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review


Detailed I-V, photoluminescence and low-frequency noise were measured on devices fabricated on GaN-on-Si films obtained by layer transfer of laser-debonded hydride vapor phase epitaxy (HVPE)-grown GaN films onto Si substrates. The experimental data demonstrate significant reduction of localized states at the metal-semiconductor interface compared to the control devices fabricated on GaN-on-sapphire films. However, experiments performed to investigate the bulk of the films yielded contradictory results. It is proposed that GaN material close to sapphire-GaN interface suffers material degradation due to the extreme local temperature rise during the debonding process. Away from the interface, the temperature rise was substantially reduced and some annealing effect may take place leading to the reduction of defects in the material.
Original languageEnglish
Title of host publicationProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
Number of pages4
ISBN (Electronic)0780378873, 9780780378872
Publication statusPublished - 1 Jan 2003
Event6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong University of Science and Technology, Hong Kong, Hong Kong
Duration: 12 Sep 200314 Sep 2003


Conference6th Chinese Optoelectronics Symposium, COES 2003
Country/TerritoryHong Kong
CityHong Kong


  • Epitaxial growth
  • Gallium nitride
  • Laser noise
  • Low-frequency noise
  • Noise measurement
  • Phase measurement
  • Photoluminescence
  • Semiconductor films
  • Substrates
  • Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Characterizations of laser-assisted debonded GaN films'. Together they form a unique fingerprint.

Cite this