Characterization of the interface between the Hf-based high-k thin film and the Si using spatially resolved electron energy-loss spectroscopy

Keyphrases

• High-resolution Electron Energy Loss Spectroscopy (HREELS) 100%
• Spatially Resolved 100%
• HfAlO 100%
• High-k Thin Films 100%
• Al Incorporation 66%
• Si Substrate 33%
• Silica 33%
• Annealing 33%
• Annealing Process 33%
• As-deposited 33%
• Interfacial Structure 33%
• Silicon Oxide 33%
• Oxygen Atmosphere 33%
• Film Substrate 33%
• Atomic Coordination 33%
• Interfacial Stability 33%
• Substrate Stabilization 33%
• Oxygen Annealing 33%
• Oxide Formation 33%
• High-Tc Films 33%

Engineering

• Energy Dissipation 100%
• Thin Films 100%
• Electron Energy 100%
• Experimental Result 50%
• Annealing Process 50%
• Si Substrate 50%
• Silicon Oxide 50%
• Monolayers 50%
• Silicon Dioxide 50%

Material Science

• Electron Energy Loss Spectrometry 100%
• Thin Films 100%
• Monolayers 50%
• Film 50%
• Silicon 50%
• Oxide Compound 50%