Abstract
HfOx/AlOx bi-layer RRAM devices were fabricated with the atomic layer deposition (ALD) method. Compared with the single-layer HfOx devices, the bi-layer devices showed less variation of the switching voltages and resistances. Inspired by the fact that varying reset stop voltage in a DC sweep can achieve multilevel high resistance state, two equivalent pulse programming schemes were proposed: one linearly increases the reset pulse amplitudes; the other exponentially increases the reset pulse width. The transient current response waveform measurement suggests the former scheme is a more energy efficient programming method.
Original language | English |
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Title of host publication | Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 |
Pages | 106-107 |
Number of pages | 2 |
DOIs | |
Publication status | Published - 11 Jul 2011 |
Externally published | Yes |
Event | 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan Duration: 25 Apr 2011 → 27 Apr 2011 |
Conference
Conference | 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 |
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Country/Territory | Taiwan |
City | Hsinchu |
Period | 25/04/11 → 27/04/11 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials