Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

Shimeng Yu; Yi Wu; Yang Chai; J. Provine; H. S Philip Wong

doi:10.1109/VTSA.2011.5872251

Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

Shimeng Yu, Yi Wu, Yang Chai, J. Provine, H. S Philip Wong

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

52 Citations (Scopus)

Abstract

HfOx/AlOx bi-layer RRAM devices were fabricated with the atomic layer deposition (ALD) method. Compared with the single-layer HfOx devices, the bi-layer devices showed less variation of the switching voltages and resistances. Inspired by the fact that varying reset stop voltage in a DC sweep can achieve multilevel high resistance state, two equivalent pulse programming schemes were proposed: one linearly increases the reset pulse amplitudes; the other exponentially increases the reset pulse width. The transient current response waveform measurement suggests the former scheme is a more energy efficient programming method.

Original language	English
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	106-107
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2011.5872251
Publication status	Published - 11 Jul 2011
Externally published	Yes
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan Duration: 25 Apr 2011 → 27 Apr 2011

Conference

Conference	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country/Territory	Taiwan
City	Hsinchu
Period	25/04/11 → 27/04/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

More information

10.1109/VTSA.2011.5872251

Cite this

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title = "Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices",

abstract = "HfOx/AlOx bi-layer RRAM devices were fabricated with the atomic layer deposition (ALD) method. Compared with the single-layer HfOx devices, the bi-layer devices showed less variation of the switching voltages and resistances. Inspired by the fact that varying reset stop voltage in a DC sweep can achieve multilevel high resistance state, two equivalent pulse programming schemes were proposed: one linearly increases the reset pulse amplitudes; the other exponentially increases the reset pulse width. The transient current response waveform measurement suggests the former scheme is a more energy efficient programming method.",

author = "Shimeng Yu and Yi Wu and Yang Chai and J. Provine and Wong, {H. S Philip}",

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Yu, S, Wu, Y, Chai, Y, Provine, J & Wong, HSP 2011, Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872251, pp. 106-107, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, 25/04/11. https://doi.org/10.1109/VTSA.2011.5872251

Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices. / Yu, Shimeng; Wu, Yi; Chai, Yang et al.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 106-107 5872251.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

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ASJC Scopus subject areas

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