Characterization of switching parameters and multilevel capability in HfOx/AlOx bi-layer RRAM devices

Shimeng Yu, Yi Wu, Yang Chai, J. Provine, H. S Philip Wong

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

24 Citations (Scopus)

Abstract

HfOx/AlOx bi-layer RRAM devices were fabricated with the atomic layer deposition (ALD) method. Compared with the single-layer HfOx devices, the bi-layer devices showed less variation of the switching voltages and resistances. Inspired by the fact that varying reset stop voltage in a DC sweep can achieve multilevel high resistance state, two equivalent pulse programming schemes were proposed: one linearly increases the reset pulse amplitudes; the other exponentially increases the reset pulse width. The transient current response waveform measurement suggests the former scheme is a more energy efficient programming method.
Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages106-107
Number of pages2
DOIs
Publication statusPublished - 11 Jul 2011
Externally publishedYes
Event2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan
Duration: 25 Apr 201127 Apr 2011

Conference

Conference2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
CountryTaiwan
CityHsinchu
Period25/04/1127/04/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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