Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis

G. M. Crean; C. Jeynes; Michael Geoffrey Somekh; R. P. Webb

Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis

G. M. Crean
, C. Jeynes
, Michael Geoffrey Somekh
, R. P. Webb

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

This paper correlates photodisplacement thermal wave characterization of ion implanted silicon wafers with the lattice information provided by Rutherford Backscattering Spectrometry.

Original language	English
Title of host publication	ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
Publisher	IEEE Computer Society
Pages	929-932
Number of pages	4
ISBN (Electronic)	0387510001
ISBN (Print)	9780387510002
Publication status	Published - 1 Jan 1989
Externally published	Yes
Event	19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany Duration: 11 Sept 1989 → 14 Sept 1989

Conference

Conference	19th European Solid State Device Research Conference, ESSDERC 1989
Country/Territory	Germany
City	Berlin
Period	11/09/89 → 14/09/89

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Cite this

Crean, G. M., Jeynes, C., Somekh, M. G., & Webb, R. P. (1989). Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis. In ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 929-932). Article 5437067 IEEE Computer Society.

@inproceedings{72d3470781c64f63b6cf2417ef27b8f4,

title = "Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis",

abstract = "This paper correlates photodisplacement thermal wave characterization of ion implanted silicon wafers with the lattice information provided by Rutherford Backscattering Spectrometry.",

author = "Crean, \{G. M.\} and C. Jeynes and Somekh, \{Michael Geoffrey\} and Webb, \{R. P.\}",

year = "1989",

month = jan,

day = "1",

language = "English",

isbn = "9780387510002",

pages = "929--932",

booktitle = "ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference",

publisher = "IEEE Computer Society",

address = "United States",

note = "19th European Solid State Device Research Conference, ESSDERC 1989 ; Conference date: 11-09-1989 Through 14-09-1989",

}

Crean, GM, Jeynes, C, Somekh, MG & Webb, RP 1989, Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis. in ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5437067, IEEE Computer Society, pp. 929-932, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 11/09/89.

Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis. / Crean, G. M.; Jeynes, C.; Somekh, Michael Geoffrey et al.
ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Computer Society, 1989. p. 929-932 5437067.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis

AU - Crean, G. M.

AU - Jeynes, C.

AU - Somekh, Michael Geoffrey

AU - Webb, R. P.

PY - 1989/1/1

Y1 - 1989/1/1

N2 - This paper correlates photodisplacement thermal wave characterization of ion implanted silicon wafers with the lattice information provided by Rutherford Backscattering Spectrometry.

AB - This paper correlates photodisplacement thermal wave characterization of ion implanted silicon wafers with the lattice information provided by Rutherford Backscattering Spectrometry.

UR - https://www.scopus.com/pages/publications/84907829317

M3 - Conference article published in proceeding or book

SN - 9780387510002

SP - 929

EP - 932

BT - ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference

PB - IEEE Computer Society

T2 - 19th European Solid State Device Research Conference, ESSDERC 1989

Y2 - 11 September 1989 through 14 September 1989

ER -

Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis

Abstract

Conference

ASJC Scopus subject areas

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