Characterization of shallow junction ion implantation profiles: Correlation between a noncontact photodisplacement thermal wave technique and rutherford backscattering analysis

G. M. Crean, C. Jeynes, Michael Geoffrey Somekh, R. P. Webb

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

This paper correlates photodisplacement thermal wave characterization of ion implanted silicon wafers with the lattice information provided by Rutherford Backscattering Spectrometry.
Original languageEnglish
Title of host publicationESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages929-932
Number of pages4
ISBN (Electronic)0387510001
ISBN (Print)9780387510002
Publication statusPublished - 1 Jan 1989
Externally publishedYes
Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
Duration: 11 Sep 198914 Sep 1989

Conference

Conference19th European Solid State Device Research Conference, ESSDERC 1989
CountryGermany
CityBerlin
Period11/09/8914/09/89

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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