Characterization of nonlinear absorption of InN epitaxial films with femtosecond pulsed transmission Z -scan measurements

T.-R. Tsai; T.-H. Wu; J.-C. Liao; T.-H. Wei; H.-P. Chiang; J.-S. Hwang; Din-ping Tsai; Y.-F. Chen

doi:10.1063/1.3086671

Characterization of nonlinear absorption of InN epitaxial films with femtosecond pulsed transmission Z -scan measurements

T.-R. Tsai, T.-H. Wu, J.-C. Liao, T.-H. Wei, H.-P. Chiang, J.-S. Hwang, Din-ping Tsai, Y.-F. Chen

Research output: Journal article publication › Journal article › Academic research › peer-review

9 Citations (Scopus)

Abstract

The femtosecond pulsed Z -scan measurements of the resonant nonlinear optical absorption of the InN epitaxial films in the range of 720-790 nm were reported. The absorption saturation behavior was found to gradually decrease with increasing photon energy. The nonlinear optical absorption cross sections of the InN films were estimated and the values are found to be in good agreement with the calculations based on the band-filling model. These results are relevant for the future development of nonlinear optical devices based on InN. © 2009 American Institute of Physics.

Original language	English
Article number	066101
Journal	Journal of Applied Physics
Volume	105
Issue number	6
DOIs	https://doi.org/10.1063/1.3086671
Publication status	Published - 9 Apr 2009
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3086671

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title = "Characterization of nonlinear absorption of InN epitaxial films with femtosecond pulsed transmission Z -scan measurements",

abstract = "The femtosecond pulsed Z -scan measurements of the resonant nonlinear optical absorption of the InN epitaxial films in the range of 720-790 nm were reported. The absorption saturation behavior was found to gradually decrease with increasing photon energy. The nonlinear optical absorption cross sections of the InN films were estimated and the values are found to be in good agreement with the calculations based on the band-filling model. These results are relevant for the future development of nonlinear optical devices based on InN. {\textcopyright} 2009 American Institute of Physics.",

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AU - Tsai, T.-R.

AU - Wu, T.-H.

AU - Liao, J.-C.

AU - Wei, T.-H.

AU - Chiang, H.-P.

AU - Hwang, J.-S.

AU - Tsai, Din-ping

AU - Chen, Y.-F.

PY - 2009/4/9

Y1 - 2009/4/9

N2 - The femtosecond pulsed Z -scan measurements of the resonant nonlinear optical absorption of the InN epitaxial films in the range of 720-790 nm were reported. The absorption saturation behavior was found to gradually decrease with increasing photon energy. The nonlinear optical absorption cross sections of the InN films were estimated and the values are found to be in good agreement with the calculations based on the band-filling model. These results are relevant for the future development of nonlinear optical devices based on InN. © 2009 American Institute of Physics.

AB - The femtosecond pulsed Z -scan measurements of the resonant nonlinear optical absorption of the InN epitaxial films in the range of 720-790 nm were reported. The absorption saturation behavior was found to gradually decrease with increasing photon energy. The nonlinear optical absorption cross sections of the InN films were estimated and the values are found to be in good agreement with the calculations based on the band-filling model. These results are relevant for the future development of nonlinear optical devices based on InN. © 2009 American Institute of Physics.

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U2 - 10.1063/1.3086671

DO - 10.1063/1.3086671

M3 - Journal article

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 066101

ER -

Characterization of nonlinear absorption of InN epitaxial films with femtosecond pulsed transmission Z -scan measurements

Abstract

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