Characterization of edge direct tunneling leakage of gate misaligned double gate MOSFETs

Keyphrases

• Gate Misalignment 100%
• Double-gate MOSFET 100%
• Tunnel Leakage 100%
• Direct Tunneling 100%
• SOI MOSFET 66%
• Bottom Gate 66%
• Double Gate 66%
• Tunneling Current 33%
• Source Area 33%
• Inverter 33%
• Heavily Doped 33%
• Significant Edges 33%
• Gate Current 33%
• Direct Tunneling Current 33%
• Gate Overlap 33%
• Inverter Chain 33%
• Drain Regions 33%
• Source-side 33%

Engineering

• Direct Tunneling 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Inverter 66%
• Source Region 33%
• Drain Region 33%
• Source Side 33%
• Trenchless Method 33%